Abstract: The present disclosure provides a display device, including a substrate, a plurality of semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes formed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, and a dielectric layer formed to cover the pair electrodes, wherein the plurality of pair electrodes are arranged in parallel to each other along a direction.

Abstract: Discussed in a method of fabricating a display device, the method including transferring a substrate to an assembly position, and placing a plurality of semiconductor light emitting devices each having a first conductive semiconductor layer and a second conductive semiconductor layer into a fluid chamber, guiding a movement of the plurality of semiconductor light emitting devices in the fluid chamber to assemble the plurality of semiconductor light emitting devices at preset positions of the substrate, etching at least one of the first conductive semiconductor layer and the second conductive semiconductor layer while the plurality of semiconductor light emitting devices are placed at the preset positions of the substrate and connecting a first wiring electrode and a second wiring electrode respectively to each of the plurality of semiconductor light emitting devices.

Abstract: The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.

Abstract: The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.

Abstract: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly.

Abstract: A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.

Abstract: A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.