Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. by an upper heater in a vacuum atmosphere at 1×10?4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

Abstract: A purification apparatus including a vertical stack of a feed heating zone having a feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7.

Abstract: A process for metal purification comprising a first step for heating a feed metal in a feed crucible to generate a vapor of the metal, a second step for directing the vapor into a condensation passageway for vapors, where part of the vapor is condensed to generate a molten condensate, a third step for directing the vapor through the condensation passageway for vapors into a solidification crucible so that the vapor is cooled to solidify said metal in a high-purity form, and a fourth step for returning the molten condensate into the feed crucible.

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250° C. by upper heater 6 in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100° C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract: A high-purity metal (such as magnesium or zinc) containing Cl, F and S in a respective amount of no more than 0.1 ppm, with the total impurity content being no more than 1 ppm.

Abstract: A purification apparatus including a vertical stack of a feed heating zone having a feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7.

Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. by an upper heater in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

Abstract: A high purity silver wire for use in recording, acoustic or image transmission applications. The high purity silver wire is made of high purity silver containing sulfur, iron, copper, palladium, gold and lead impurities in an amount such that no one of the sulfur, iron, copper, palladium, gold and lead impurities individually exceeds 0.5 ppmw, and wherein all other impurities are present in a total amount of less than 1 ppmw.

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250° C. by upper heater 6 in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100° C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250° C. by upper heater 6 in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100° C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract: In a purification apparatus comprising a vertical stack of a feed heating zone having the feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7, a feed metal, preferably with a purity of at least 3N, is charged into the feed crucible 1 in a vacuum atmosphere, preferably at no more than 13 Pa (10−1 Torr), with the feed crucible 1 and the condensation vapor passage plates 5 being heated at controlled temperatures to generate the vapor of the metal in the feed heating zone; part of the metal vapor is condensed to form a molten condensate which is returned into the feed crucible 1, thereby; the process solidifying the high-purity metal in the solidification zone; the solidified metal has a purity of at least 6N and contains Cl, F and S in a respective amount of no more than 0.

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract: An apparatus for producing a high-purity silver material. The apparatus includes an electric furnace. The electric furnace has an outer cylinder which encloses an inner cylinder. The outer cylinder is capable of being evacuated with a vacuum pump. A recovery mold is disposed within the inner cylinder. An aspiration table is connected to a central portion of the recovery mold. A feed crucible is disposed above the recovery mold and is connected to the aspiration table. A cooling trap is disposed below the recovery mold. A water-cooling flange is disposed below the cooling mold.

Abstract: The novel apparatus for producing high-purity silver comprises an electric furnace 1, an outer cylinder 3 contained in the furnace in such a way that it can be evacuated with a vacuum pump 2, a feed crucible 5 placed within the outer cylinder 3 and fixed onto an aspiration table 9 provided in the center of a recovery mold 6, a cooling trap 8 and a water-cooled flange 7 that are detachably connected to the other parts including an inner cylinder 4 located over the crucible 5. When a silver feed is heated within the crucible at 3a specified temperature and pressure, the silver evaporates and condenses on the ceiling of the inner cylinder to yield silver particles, which are collected in the recovery mold; gold, copper and other impurities having higher vapor pressures than silver are left within the crucible whereas sulfur, sodium and other impurities having higher vapor pressures are withdrawn by means of the vacuum pump to be introduced into the cooling trap and hereafter solidified.

Abstract: A process for producing a high-purity silver material comprising placing a silver feed in a crucible disposed in a furnace comprising an inner cylinder which encloses the crucible and an outer cylinder which encloses the inner cylinder; heating the silver feed at a temperature not lower than 1065° C. and at a pressure not higher than 0.1 Pa such that the silver evaporates and condenses on the ceiling of the inner cylinder to yield silver particles; and collecting silver particles in a recovery mold disposed beneath the crucible and within the inner cylinder, such that gold, copper and other impurities having a lower vapor pressure than silver remain within the crucible, whereas sulfur, sodium and the other impurities having a higher vapor pressure than silver are withdrawn by a vacuum pump and are then introduced into a cooling trap disposed beneath the recovery mold, such that the higher vapor pressure impurities are solidified in the cooling trap.

Abstract: An electrolytic refining method for gallium by depositing refined gallium on a cathode in an electrolytic solution using a melted raw gallium material as an anode in an electrolytic cell is disclosed, comprising applying a centrifugal force to the melted raw gallium material and discharging out a scum gathered in the central portion of the cell.