Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.

Abstract: A memory system includes a memory controller coupled to at least one memory device via high-speed data and request links. The timing and voltage margins of the links are periodically calibrated to reduce bit error. The high-speed request links complicate calibration because commands issued over the uncalibrated request links can be erroneously interpreted by the memory device. Misinterpreted commands can disrupt the calibration procedure (e.g., a write command might be misinterpreted as a power-down command). The memory controller addresses this problem using a separate, low-speed control interface to issue a filter command that instructs the memory device to decline potentially disruptive requests when in a calibration mode.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requester IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requester IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: An integrated circuit memory device, system and method turns on an output driver in response to a stored value that represents an amount of time from when the output driver is in an operational state to when the output driver begins to output valid read data in various embodiments. An output driver outputs valid read data after a settling amount of time. The sum of the amount of time from when the memory device receives a read command to when the output driver is turned-on and the settling amount of time, is approximately the time from receiving the read command, to at least beginning to provide valid read data at the output of the integrated circuit memory device. A read command is provided to the integrated circuit memory device by a memory controller. In an embodiment, the memory controller also provides or programs the value that represents the amount of time from when the output driver is in an operational state to when the output driver begins to output valid read data.

Abstract: An output-width value is stored within a configuration circuit of a memory device to control the number of output drivers that are to output data from the memory device in response to a read request. An output-latency value is determined based, at least in part, on the output-width value. The output latency value is stored within the configuration circuit to control the amount of time that transpires before the output drivers are enabled to output data in response to the read request.

Abstract: An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device comprises an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.