Abstract: Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are provided. The methods may include forming a channel region that protrudes from an upper surface of a substrate in a vertical direction, forming a gate insulator layer on a side of the channel region, after forming the gate insulator layer, forming a top source/drain on the channel region, and forming a gate electrode on the gate insulator layer.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are provided. The methods may include forming a channel region that protrudes from an upper surface of a substrate in a vertical direction, forming a gate insulator layer on a side of the channel region, after forming the gate insulator layer, forming a top source/drain on the channel region, and forming a gate electrode on the gate insulator layer.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A method for fabricating an SOI wafer, which involves bonding a plurality of wafers each provided at its upper surface with an oxide film in such a manner that the oxide film of each wafer is upwardly disposed, heating the resulting wafer structure to form an ingot, and cutting the ingot into pieces which will be used as SOI wafers. Accordingly, it is possible to achieve an improvement in productivity in the fabrication of SOI wafers. As a result, mass production can be achieved. The invention also provides a method for fabricating an SOI device, which involves forming a silicon film having a desired thickness beneath a field oxide film and implanting impurity ions in the silicon film, thereby forming doped regions. Accordingly, it is possible to solve the problem caused by floating of the semiconductor substrate.