Abstract: A bearing device for a vehicle includes a main body unit mounted on a mounting region in a rail structure configured so that the mounting region is formed on a first rail that is any one of two rails rail-coupled to slide and the first rail slides along a second rail, a first shape unit provided to protrude from an upper surface of the main body unit and be in contact with the second rail and formed to damp a vibration in a first direction transmitted to the main body unit, and a second shape unit provided to protrude from a side surface of the main body unit and be in contact with the second rail and formed to damp a vibration in a second direction transmitted to the main body unit.

Abstract: A laser light source is provided including an airtight container. A first resonance mirror and a second resonance mirror are disposed outside the airtight container. The first resonance mirror includes a lens unit and a reflection coating layer. The lens unit includes a first surface and a second surface, and the first surface is inclined with respect to the second surface.

Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

Abstract: A heat transferring device including a heater, a cooler, and a recoverer may be provided. The heater may be configured to heat a first liquid working fluid and change the first liquid working fluid to a gaseous working fluid. The cooler may be configured to cool the gaseous working fluid supplied from the heater and change the gaseous working fluid supplied from the heater to a second liquid working fluid. The recoverer may be configured to enable the second liquid working fluid from the cooler to move to the heater. Accordingly, the second liquid working fluid of the cooler may be movable in an upward direction and then recoverable using gravity, without a separate power source.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are provided. The methods may include forming a channel region that protrudes from an upper surface of a substrate in a vertical direction, forming a gate insulator layer on a side of the channel region, after forming the gate insulator layer, forming a top source/drain on the channel region, and forming a gate electrode on the gate insulator layer.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are provided. The methods may include forming a channel region that protrudes from an upper surface of a substrate in a vertical direction, forming a gate insulator layer on a side of the channel region, after forming the gate insulator layer, forming a top source/drain on the channel region, and forming a gate electrode on the gate insulator layer.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A method for fabricating an SOI wafer, which involves bonding a plurality of wafers each provided at its upper surface with an oxide film in such a manner that the oxide film of each wafer is upwardly disposed, heating the resulting wafer structure to form an ingot, and cutting the ingot into pieces which will be used as SOI wafers. Accordingly, it is possible to achieve an improvement in productivity in the fabrication of SOI wafers. As a result, mass production can be achieved. The invention also provides a method for fabricating an SOI device, which involves forming a silicon film having a desired thickness beneath a field oxide film and implanting impurity ions in the silicon film, thereby forming doped regions. Accordingly, it is possible to solve the problem caused by floating of the semiconductor substrate.