Abstract: The embodiment relates to a display device of a semiconductor light emitting device. A display device of a semiconductor light emitting device according to the embodiment may include a first display module substrate and a second display module substrate disposed adjacently, a plurality of semiconductor light emitting device assemblies disposed on the first, second display module substrates, first and second side wirings disposed on the sides of the first, second display module substrates respectively and electrically connected to the semiconductor light emitting device assemblies, and a porous adhesive resin layer disposed between the first display module substrate and the second display module substrate.

Abstract: Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an adhesive film disposed between the roller rotating part and the assembly substrate, penetration electrodes penetrating the assembly substrate and roller pad electrodes disposed on the roller rotating part and electrically connected to the penetration electrodes.

Abstract: The present invention can be applied to a technical field relating to display devices, and relates to a modular display device using, for example, light-emitting devices and to a method for manufacturing same. The present invention comprises: at least two display modules, each including a substrate having a first surface and a second surface, and a plurality of semiconductor light-emitting devices mounted on the first surface of the substrate; a light-absorbing layer positioned in a gap between the display modules; and an encapsulation layer positioned on the first surfaces of the display modules, wherein the light-absorbing layer may include: a first section positioned on the first surface of the substrate; a second section positioned in a gap between the display modules adjacent to each other; and a third section positioned on the second surface of the substrate.

Abstract: Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an adhesive film disposed between the roller rotating part and the assembly substrate, penetration electrodes penetrating the assembly substrate and roller pad electrodes disposed on the roller rotating part and electrically connected to the penetration electrodes.

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.

Abstract: A compound solar cell includes a compound semiconductor layer, a first electrode and a second electrode respectively formed on a first surface and a second surface of the compound semiconductor layer, a support substrate formed on the second electrode, an opening formed in the compound semiconductor layer, the opening positioned along a first longitudinal side of the compound semiconductor layer to expose the second electrode, and a through hole connected to the opening and formed to penetrate the second electrode and the support substrate.