Abstract: Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

Abstract: Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

Abstract: Methods for processing semiconductor materials and substrates with a focused or collimated light beam. Light may be directed on a sample to alter material properties at a depth below the surface. The focused light beam has a peak power density positioned at a selected depth, and absorption of light energy, resulting from selection of wavelength and optical characteristics of the substrate as a function of depth, results in process effects taking place over a preferred limited range of depth. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the light beam density in the vicinity of the focused beam spot. The wavelength may be selected to be appropriate for the process effect chosen. The beam may be scanned over the substrate to selectively provide processing effects.

Abstract: Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.

Abstract: A system and method for conditioning a beam of light comprised of several wavelengths by means of selecting from among the plurality of available wavelengths, a desired set of wavelengths simultaneously. A small number of multi-wavelength lasers or continuous spectra light sources, or both, may be the source for the plurality of light wavelengths, and a configuration of beam splitters/combiners, mirrors and wavelength selectable pass- and stop-filters provide a combined beam of light wavelengths selected from among the available wavelengths.

Abstract: Systems and techniques for characterizing samples using optical techniques are described. Light may be incident on a sample in the form of a pre-defined pattern which impinges on a wafer surface, and a reflection of the pattern is detected at a detector. Information indicative of changes in the pattern after reflection may be used to determine one or more sample characteristics and/or one or more pattern characteristics, such as stress, warpage, and curvature. The light may be coherent light of a single wavelength, or may be light of multiple wavelengths, and the pattern may be generated by transmission of the light through a diffraction grating, or hologram. The light source may be incoherent or multi-wavelength, and the pattern may be generated by imaging a pattern disposed on a mask on the sample and re-imaging the pattern at the detector.

Abstract: A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.

Abstract: A wafer mapping system uses a camera to acquire an image of a carrier containing wafers. In one embodiment, the acquired image is stored as rows and columns of pixels. The presence and location of a wafer in the carrier are determined by looking for pixel intensity variations in a column of the image.

Abstract: An improved system and method for obtaining data related to the operation of a processing system which converts from analog measurement data, usually obtained from meters and gages, to digital data. Visual images of various types of measuring instruments are collected and used for measuring a process functionality. An image sensor provides an image of a first feature of the measuring instrument. The image data is processed by an image processor, which is operable to detect a first feature and determine its position relative to a second feature of the measuring instrument. The difference in the relative positions (measured distance) can then be compared to a predetermined or expected value. If the measured and expected values are not substantially the same, a signal can be generated which instructs a controller to adjust the process functionality until the measured value reaches the expected value.

Abstract: A robot wafer alignment tool uses a reflector mounted on a multi-axis robot to determine the position of the robot or other objects within a chamber. The reflector reflects images to at least one camera from an area or object of interest in the chamber.

Abstract: A system and associated method for aligning semiconductor wafers and wafer-like objects relative to a transport mechanism. An image of, for example, a wafer is acquired, digitized, and stored in a computer as an array of pixels, each pixel representing a point on the image. Data points along the edge of the wafer are extracted and used to geometrically estimate the center of the wafer object. The estimated wafer center is then compared to the position of a predetermined reference position to determine an offset. Using this information, the wafer transport mechanism can then be re-adjusted to pick up the wafer on the corrected center.

Abstract: A robot wafer alignment tool uses a reflector mounted on a multi-axis robot to determine the position of the robot or other objects within a chamber. The reflector reflects images to at least one camera from an area or object of interest in the chamber.