Patents by Inventor Kitchun Kwong

Kitchun Kwong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and formation method of semiconductor device with fin structures
    Patent number: 11127639
    Abstract: A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: September 21, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zhen Geng, Kitchun Kwong, Taicheng Shieh, Bo-Shiuan Shie, Po-Nien Chen, Chih-Yung Lin
  • STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STRUCTURES
    Publication number: 20210057286
    Abstract: A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zhen Geng, Kitchun Kwong, Taicheng Shieh, Bo-Shiuan Shie, Po-Nien Chen, Chih-Yung Lin