Patents by Inventor Kitsuhiro Kimura

Kitsuhiro Kimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4333989
    Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
    Type: Grant
    Filed: February 22, 1982
    Date of Patent: June 8, 1982
    Assignee: Semiconductor Research Foundation
    Inventors: Jun-Ichi Nishizawa, Kitsuhiro Kimura