Abstract: A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.

Abstract: A silicon microphone comprising a backplate of electrically conductive or semi-conductive material comprising a rigid aperture area and a surrounding area, a diaphragm of electrically conductive or semi-conductive material comprising a flexible member that extends over the aperture area and a surrounding area that is at least partially connected to, and insulated from, the surrounding area of the backplate, the aperture area of the backplate and flexible member of the diaphragm forming two parallel plates of a capacitor spaced apart by a cavity, a bond pad formed on the surrounding area of the diaphragm, a bond pad formed on the surrounding area of the backplate, a channel formed in the diaphragm surrounding the bond pad formed on the surrounding area of the backplate, at least one air channel formed in the surrounding area of the diaphragm and open into the cavity between the flexible member and the aperture area of the backplate, and at least one vent through the surrounding area of the diaphragm connected

Abstract: A sensor including: a backplate of electrically conductive or semi-conductive material, the backplate including a plurality of backplate holes; a diaphragm of electrically conductive or semi-conductive material that is connected to, and insulated from the backplate, the diaphragm defining a flexible member and an air gap associated with the flexible member; a bond pad formed on an area of the backplate surrounding the cavity; and a bond pad formed on an area of the diaphragm surrounding the air gap; wherein the flexible member and air gap defined by the diaphragm extend beneath the plurality of backplate holes.

Abstract: A silicon microphone includes a diaphragm that is able to flex over an aperture, an area allowing electrical connection to the diaphragm, a backplate parallel to and spaced apart from the diaphragm and extending over the aperture, the backplate being fixed, the backplate and diaphragm forming the parallel plates of a capacitor, the backplate and diaphragm being attached to and insulated from each other around at least a portion the boundary of the aperture, and a backplate support attached to the backplate around the boundary of the aperture, the backplate support not forming an electrical connection with the backplate.

Abstract: A silicon microphone comprising a backplate of electrically conductive or semi-conductive material comprising a rigid aperture area and a surrounding area, a diaphragm of electrically conductive or semi-conductive material comprising a flexible member that extends over the aperture area and a surrounding area that is at least partially connected to, and insulated from, the surrounding area of the backplate, the aperture area of the backplate and flexible member of the diaphragm forming two parallel plates of a capacitor spaced apart by a cavity, a bond pad formed on the surrounding area of the diaphragm, a bond pad formed on the surrounding area of the backplate, a channel formed in the diaphragm surrounding the bond pad formed on the surrounding area of the backplate, at least one air channel formed in the surrounding area of the diaphragm and open into the cavity between the flexible member and the aperture area of the backplate, and at least one vent through the surrounding area of the diaphragm connected

Abstract: The invention comprises a method of fabricating a three-axis accelerometer. A first wafer having a first and a second major surface provided with etching at least two cavities in the first major surface of the first wafer and patterning metal onto the first major surface of the first wafer to form electrical connections for a third accelerometer. A second wafer, etching a portion of a first major surface of the second wafer and bonding the first major surface of the first wafer to the first major surface of the second wafer. The etching and bonding of the surfaces deposit and pattern metallizating, and deposit and pattern a masking layer on the second major surface of the second wafer, defining the shape of a first, a second and the third accelerometer. The first and second accelerometers are formed over the cavities etched in the first major surface of the first wafer.

Abstract: The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.

Abstract: The invention comprises a method of fabricating a three-axis accelerometer. A first wafer having a first and a second major surface provided with etching at least two cavities in the first major surface of the first wafer and patterning metal onto the first major surface of the first wafer to form electrical connections for a third accelerometer. A second wafer, etching a portion of a first major surface of the second wafer and bonding the first major surface of the first wafer to the first major surface of the second wafer. The etching and bonding of the surfaces deposit and pattern metallizating, and deposit and pattern a masking layer on the second major surface of the second wafer, defining the shape of a first, a second and the third accelerometer. The first and second accelerometers are formed over the cavities etched in the first major surface of the first wafer.

Abstract: The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.