Abstract: An endpoint detector has a window, a first temperature control unit, a second temperature control unit and an analyzing unit. The window transmits light emitted from plasma in a processing chamber, and covers a passage through a sidewall of the processing chamber. The first temperature control unit maintains the window at a first temperature. The second temperature control unit maintains an inner surface of the passage at a second temperature, which is lower than the first temperature. The analyzing unit analyzes the light and determines an endpoint of a process in the processing chamber.

Abstract: A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.