Patents by Inventor Kiwami Fujimoto

Kiwami Fujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6914010
    Abstract: A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and C2H2F4, the line width variation between the first and the second wiring portions is restrained.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: July 5, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Jae Young Jeong, Takashi Fuse, Kiwami Fujimoto