Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.

Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH2F2 or CH3F.

Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.

Abstract: The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

Abstract: The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.

Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.

Abstract: In an etching method and apparatus, a plasma etching is performed on an etching target film formed on an object to be processed in a processing chamber by generating a plasma of a processing gas introduced into the airtight processing chamber. A resist including an alicyclic acrylate resin and/or an alicyclic methacrylate resin is used as a mask and wherein the plasma etching is performed while maintaining a surface temperature of the object at about 20° C. or less.