Patents by Inventor Kiwamu Shirakawa
Kiwamu Shirakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8963544Abstract: A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion.Type: GrantFiled: September 29, 2009Date of Patent: February 24, 2015Assignee: The Research Institute for Electric and Magnetic MaterialsInventors: Hirofumi Imatani, Masaaki Yamamoto, Mamiko Naka, Yasushi Kaneta, Kiwamu Shirakawa
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Publication number: 20110273174Abstract: A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion.Type: ApplicationFiled: September 29, 2009Publication date: November 10, 2011Applicant: OMRON CORPORATIONInventors: Hirofumi Imatani, Masaaki Yamamoto, Mamiko Naka, Yasushi Kaneta, Kiwamu Shirakawa
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Patent number: 7218103Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection andType: GrantFiled: June 19, 2006Date of Patent: May 15, 2007Assignees: The Foundation: The Research Institute for Electric and Magnetic Materials, Daido Steel Co., Ltd.Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
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Patent number: 7170287Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.Type: GrantFiled: May 24, 2004Date of Patent: January 30, 2007Assignees: The Foundation : The Research Institute for Electric and Magnetic Materials, Daido Steel Co., Ltd.Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
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Publication number: 20060226835Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection andType: ApplicationFiled: June 19, 2006Publication date: October 12, 2006Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTD.Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
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Patent number: 6962001Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, coType: GrantFiled: November 4, 2004Date of Patent: November 8, 2005Assignee: The Research Institute for Electric and Magnetic MaterialsInventors: Takeshi Yano, Kiwamu Shirakawa, Nobukiyo Kobayashi
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Publication number: 20050115090Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, coType: ApplicationFiled: November 4, 2004Publication date: June 2, 2005Applicant: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALSInventors: Takeshi Yano, Kiwamu Shirakawa, Nobukiyo Kobayashi
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Publication number: 20040239321Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.Type: ApplicationFiled: May 24, 2004Publication date: December 2, 2004Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTD.Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
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Publication number: 20040239320Abstract: A thin film magnetic sensor comprises a pair of first thin film yoke and second thin film yoke each formed of a soft magnetic material, the first and second thin film yokes being positioned to face each other with a gap interposed therebetween; a GMR film having an electrical resistivity higher than that of the soft magnetic material and formed in the gap so as to be electrically connected to the first thin film yoke and the second thin film yoke; and an insulating substrate made of an insulating nonmagnetic material and serving to support the first thin film yoke, the second thin film yoke and the GMR film. The GMR film is formed on a facing surface of the first thin film yoke positioned to face the second thin film yoke, and the length of the gap is defined by the thickness of the GMR film positioned on the facing surface of the first thin film yoke.Type: ApplicationFiled: May 24, 2004Publication date: December 2, 2004Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTDInventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
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Patent number: 6642714Abstract: A thin-film magnetic field sensor is provided which includes two arms of a bridge circuit formed of a first element having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and a second element having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the second element has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the first element due to causes other than the magnetic field. Since the output of the bridge circuit is in proportion to the difference in electrical resistance values between the first and second elements, part of a change due to causes other than the magnetic field is canceled in the output of the bridge circuit, whereby the magnetic field value can be accurately measured.Type: GrantFiled: August 22, 2002Date of Patent: November 4, 2003Assignee: The Research Institute for Electric and Magnetic MaterialsInventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto
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Publication number: 20030042902Abstract: There is provided a thin-film magnetic field sensor, which has a simple structure and a high detecting sensitivity, and reduces measurement errors due to temperature variation or the like. In the thin-film magnetic field sensor according to the present invention, two arms of a bridge circuit are formed of an element 5 having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and an element 10 having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the element 10 has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the element 5 due to causes other than the magnetic field.Type: ApplicationFiled: August 22, 2002Publication date: March 6, 2003Applicant: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALSInventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto