Abstract: The disclosure relates to a cancer treatment system including: a radiation source configured to produce 1.27-micrometer wavelength radiation, wherein the 1.27-micrometer wavelength radiation is generated from singlet oxygen. The radiation source may be an oxygen laser or an amplified spontaneous emission generator. The 1.27-micrometer wavelength radiation may be a laser or an amplified spontaneous emission.

Abstract: An inspection device according to the present disclosure includes a spheroidal mirror configured to reflect illumination light as convergent light, a plane mirror configured to reflect the illumination light incident as the convergent light and cause the reflected illumination light to be incident on an object of inspection as incident light, a projection optical system configured to focus reflected light of the incident light reflected by the object of inspection, and a detector configured to detect reflected light focused by the projection optical system, wherein an angle of incidence of an incident optical axis being an optical axis of the incident light on the object of inspection is greater than 6 [deg], an angle of reflection of a reflected optical axis being an optical axis of the reflected light on the object of inspection is greater than 6 [deg].

Abstract: A mask inspection apparatus according to the present disclosure includes: a field stop unit capable of switching between a field stop for an optical mask configured to emit an incident illumination light while maintaining the polarization state thereof and a field stop for an EUV mask configured to change the polarization state of a part of the incident illumination light and to cause an illumination light including an S-polarized light and a P-polarized light; a beam splitter unit capable of switching between a PBS for an optical mask and a non-polarized BS; an objective lens configured to collect an illumination light reflected in the beam splitter unit in a mask to be inspected and collect a reflected light obtained by reflecting an illumination light in the mask to be inspected; and a ?/4 plate that can be provided in an optical path of an illumination light and a reflected light.

Abstract: A correction method according to an embodiment includes illuminating an object to be inspected by using critical illumination by illumination light L11 generated by a light source 11, concentrating light from the object to be inspected illuminated by the illumination light L11 and acquiring image data of the object to be inspected by detecting the concentrated light by a first detector 23, concentrating part of the illumination light L11, and acquiring image data of a brightness distribution of the illumination light L11 by detecting the concentrated illumination light L11 by a second detector 33, and correcting the image data of the object to be inspected based on the image data of the brightness distribution.

Abstract: A mask inspection apparatus according to the present disclosure includes: a field stop unit capable of switching between a field stop for an optical mask configured to emit an incident illumination light while maintaining the polarization state thereof and a field stop for an EUV mask configured to change the polarization state of a part of the incident illumination light and to cause an illumination light including an S-polarized light and a P-polarized light; a beam splitter unit capable of switching between a PBS for an optical mask and a non-polarized BS; an objective lens configured to collect an illumination light reflected in the beam splitter unit in a mask to be inspected and collect a reflected light obtained by reflecting an illumination light in the mask to be inspected; and a ?/4 plate that can be provided in an optical path of an illumination light and a reflected light.

Abstract: An inspection apparatus according to an aspect of the present invention includes an EUV light source 11, an illumination optical system 10 provided to apply the EUV light to an EUV mask 60, a concave mirror and a convex mirror 22 configured to reflect the EUV light reflected on the EUV mask 60, a camera 32 configured to detect EUV light reflected on the convex mirror 22 and thereby take an image of the EUV mask 60, an AF light source 16 configured to generate AF light having a wavelength of 450 nm to 650 nm, first and second detectors 27 and 30 configured to detect the AF light reflected on the EUV mask 60 through the concave mirror with the hole 21 and the convex mirror 22, and an processing device 31 configured to adjust a focus point of the EUV light on the EUV mask 60.

Abstract: The disclosed invention relates to a COIL based defense system which stays at an altitude of higher than 17 km. The defense system is comprised of a high-altitude airship which carries a COIL in which gases flow along the optical axis with several exit ports. Since the COIL can operate without a vacuum pump, it can be lightweighted.

Abstract: The disclosed invention relates to a COIL based defense system which stays at an altitude of higher than 17 km. The defense system is comprised of a high-altitude airship which carries a COIL in which gases flow along the optical axis with several exit ports. Since the COIL can operate without a vacuum pump, it can be lightweighted.

Abstract: Provided are a mask inspection apparatus and a mask inspection method that can prevent a reduction in a reflectance of a drop-in mirror, which is caused by carbon contaminants. A mask inspection apparatus according to the present invention includes a drop-in mirror including multi-layer film and a reflective surface. The drop-in mirror is configured to reflect illumination light incident on the reflective surface and illuminate the mask. An area of the reflective surface is configured to be greater than an area of an illuminated spot irradiated with the illumination light on the reflective surface. The drop-in mirror is configured to be movable. A position of the illuminated spot on the reflective surface is configured to be moved when the drop-in mirror is moved.

Abstract: A correction method according to an embodiment includes illuminating an object to be inspected by using critical illumination by illumination light L11 generated by a light source 11, concentrating light from the object to be inspected illuminated by the illumination light L11 and acquiring image data of the object to be inspected by detecting the concentrated light by a first detector 23, concentrating part of the illumination light L11, and acquiring image data of a brightness distribution of the illumination light L11 by detecting the concentrated illumination light L11 by a second detector 33, and correcting the image data of the object to be inspected based on the image data of the brightness distribution.

Abstract: The disclosed invention relates to a method of realizing a laser processing system. The laser processing system includes a flashlamp-pumped pulsed iodine laser oscillator that generates a laser pulse, the flashlamp pumped pulsed iodine laser oscillator being a master oscillator of a MOPA system; and a chemical oxygen-iodine laser amplifier that amplifies a double pulse, the chemical oxygen-iodine laser amplifier being a power amplifier of the MOPA system.

Abstract: A space based laser defense system according to the embodiment of the present invention, including a high-altitude airship (HAA). The high-altitude airship (HAA) includes a balloon filled with a lifting gas, and a focusing optics that focuses a laser beam from an outside of the high-altitude airship at a target. The laser beam may come to the high altitude airship from a space-based laser (SBL) that stays in a geostationary Earth orbit.

Abstract: A laser light source device having a simple configuration and an inspection device are provided. A laser light source device 200 according to an exemplary embodiment in accordance with the present invention has a repetition frequency of 1 MHz or higher, and includes fundamental wave generation means 201 for oscillating laser light including a fundamental wave with its center wavelength being included in one of first to fourth wavelength bands, and means 205 for generating a sixth harmonic of pulsed laser light extracted from the fundamental wave generation means 201. The first wavelength band is 1064.326 nm to 1064.511 nm. The second wavelength band is 1064.757 nm to 1064.852 nm. The third wavelength band is 1063.805 nm to 1063.878 nm. Further, the fourth wavelength band is 1063.962 nm to 1064.031 nm.

Abstract: An inspection apparatus according to an aspect of the present invention includes an EUV light source 11, an illumination optical system 10 provided to apply the EUV light to an EUV mask 60, a concave mirror and a convex mirror 22 configured to reflect the EUV light reflected on the EUV mask 60, a camera 32 configured to detect EUV light reflected on the convex mirror 22 and thereby take an image of the EUV mask 60, an AF light source 16 configured to generate AF light having a wavelength of 450 nm to 650 nm, first and second detectors 27 and 30 configured to detect the AF light reflected on the EUV mask 60 through the concave mirror with the hole 21 and the convex mirror 22, and an processing device 31 configured to adjust a focus point of the EUV light on the EUV mask 60.

Abstract: Provided are a mask inspection apparatus and a mask inspection method that can prevent a reduction in a reflectance of a drop-in mirror, which is caused by carbon contaminants. A mask inspection apparatus according to the present invention includes a drop-in mirror including multi-layer film and a reflective surface. The drop-in mirror is configured to reflect illumination light incident on the reflective surface and illuminate the mask. An area of the reflective surface is configured to be greater than an area of an illuminated spot irradiated with the illumination light on the reflective surface. The drop-in mirror is configured to be movable. A position of the illuminated spot on the reflective surface is configured to be moved when the drop-in mirror is moved.

Abstract: The present invention is directed to the provision of an interferometer and a phase shift amount measuring apparatus that can precisely operate in the EUV region. The interferometer according to the invention comprises an illumination source for generating an illumination beam, an illumination system for projecting the illumination beam emitted from the illumination source onto a sample, and an imaging system for directing the reflected beam by the sample onto a detector. The illumination system includes a first diffraction grating for producing a first and second diffraction beams which respectively illuminate two areas on the sample where are shifted from each other by a given distance, and the imaging system includes a second grating for diffracting the first and second diffraction beams reflected by the sample to produce a third and fourth diffraction beams which are shifted from each other by a given distance.

Abstract: Provided with a pellicle inspection apparatus that inspects a pellicle film of a mask provided with a pellicle and used in EUV lithography. The pellicle inspection apparatus includes: an illumination optical system that projects a converging illuminating beam toward the pellicle film; a light collection optical system including an object lens having an optical axis substantially orthogonal to the pellicle film and that collects scattering light outgoing from a foreign substance present on the pellicle film; and a detection system that detects the scattering light collected by the light collection optical system, wherein an incident angle ?2 of the illuminating beam with respect to the pellicle film satisfies Expression ?2??0>?1+23°, where ?0 is a collecting angle (half angle) of the illuminating beam, and ?1 is a maximum light-receiving angle (half angle) of the object lens.

Abstract: The disclosed invention relates to a pulsed iodine laser apparatus. The laser apparatus has a flashlamp-pumped iodine laser oscillator which produces a laser pulse with a full pulse width of longer than 1 microsecond, and a COIL amplifier. The laser apparatus may has a controller which controls the timing of injecting chlorine gas contained in a high-pressure chlorine tank into the singlet oxygen generator by outputting an open/close signal of the valve V2, and the timing of injecting iodine molecules contained in a iodine molecule tank into an amplifier chamber of the COIL amplifier.

Abstract: The disclosed invention relates to a pulsed iodine laser apparatus. The laser apparatus has a flashlamp-pumped iodine laser oscillator which produces a laser pulse with a full pulse width of longer than 1 microsecond, and a COIL amplifier. The laser apparatus may has a controller which controls the timing of injecting chlorine gas contained in a high-pressure chlorine tank into the singlet oxygen generator by outputting an open/close signal of the valve V2, and the timing of injecting iodine molecules contained in a iodine molecule tank into an amplifier chamber of the COIL amplifier.

Abstract: The disclosed invention relates to a method of realizing a laser processing system. The system relating to one aspect of the invention is provided with a processing laser, a vaporization laser, and an oscillator controller. The processing laser is a flashlamp-pumped 1.06 ?m solid-state laser, a pulsed iodine laser or an oxygen molecule laser. The vaporization laser is a pulsed laser whose wavelength is longer than 1.4 ?m.