Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), it is possible to form a fine pattern of the electrode without using a shadow mask, since it is easy to manufacture a transparent display having high light transmittance, it is possible to more easily apply UDC.

Abstract: A semiconductor memory device including a memory cell array and a peripheral circuit element configured to control an operation of the memory cell array, and a wiring structure including first and second wiring structures spaced apart from each other on the peripheral circuit element, a first voltage and a second voltage different from the first voltage applied to two opposite ends of the first wiring structure, respectively, and a third voltage different from the first and second voltages applied to the second wiring structure, may be provided. The first wiring structure includes first lines extended in a first direction and spaced apart from each other in a second direction crossing the first direction, the second wiring structure includes second lines extended in the first direction and spaced apart from each other in the second direction, and one of the first lines is between the second lines.

Abstract: The present invention relates to a component for a semiconductor manufacturing apparatus, and a heat-resistant material, and the component for a semiconductor manufacturing apparatus, according to the present invention, has a level difference with a plurality of layers on a cross-section thereof, wherein the plurality of layers includes a first surface exposed to plasma and a second surface loaded on the semiconductor manufacturing apparatus.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), it is possible to form a fine pattern of the electrode without using a shadow mask, since it is easy to manufacture a transparent display having high light transmittance, it is possible to more easily apply UDC.

Abstract: A display device includes, a light emitting element including a first electrode, a light emitting layer, and a second electrode, a first transistor including a first source electrode, a first active area, a first drain electrode, and a first gate electrode, a second transistor including a second source electrode, a second active area, a second drain electrode, and a second gate electrode, and a third transistor including a third source electrode, a third active area, a third drain electrode, and a third gate electrode, wherein the first source electrode is connected to the first electrode, the second source electrode is connected to the first gate electrode, the third drain electrode is connected to the first source electrode, the second gate electrode and the third gate electrode are defined by a same conductive line, and the second active area and the third active area are disposed in different layers.

Abstract: A semiconductor memory device including a memory cell array and a peripheral circuit element configured to control an operation of the memory cell array, and a wiring structure including first and second wiring structures spaced apart from each other on the peripheral circuit element, a first voltage and a second voltage different from the first voltage applied to two opposite ends of the first wiring structure, respectively, and a third voltage different from the first and second voltages applied to the second wiring structure, may be provided. The first wiring structure includes first lines extended in a first direction and spaced apart from each other in a second direction crossing the first direction, the second wiring structure includes second lines extended in the first direction and spaced apart from each other in the second direction, and one of the first lines is between the second lines.

Abstract: Provided is a method in which a management server provides wireless LAN security policy by participating in multiple APs. The method includes a step of receiving terminal information of a terminal, which is acquired in a process of scanning broadcasting information of multiple APs, from each of the multiple APs, a step of issuing and storing a token for opening a wireless LAN data channel to each of the multiple APs on the basis of reception time points of the terminal information, a step of receiving a token request for opening a wireless LAN data channel to an AP to be accessed, selected by a terminal among the multiple APs, and a step of distributing, to the terminal, a token of the AP to be accessed corresponding to the token request.

Abstract: A method for fabricating a display device includes providing a substrate into a chamber; forming an active material layer on the substrate by a plurality of deposition processes in the chamber; forming an active layer by patterning the active material layer: forming a transistor including a gate electrode overlapping the active layer; and forming a pixel electrode on the transistor, at least two deposition processes among the plurality of deposition processes are performed by applying different magnitudes of power, respectively.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), it is possible to form a fine pattern of the electrode without using a shadow mask, since it is easy to manufacture a transparent display having high light transmittance, it is possible to more easily apply UDC.

Abstract: Provided are a compound capable of lowering a driving voltage, enhancing light emitting efficiency and thermal resistance, and improving lifespan and color purity of the element, an organic element using the same, and an electric device for the same.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

Abstract: Provided is a method in which a management server provides wireless LAN security policy by participating in multiple APs. The method includes a step of receiving terminal information of a terminal, which is acquired in a process of scanning broadcasting information of multiple APs, from each of the multiple APs, a step of issuing and storing a token for opening a wireless LAN data channel to each of the multiple APs on the basis of reception time points of the terminal information, a step of receiving a token request for opening a wireless LAN data channel to an AP to be accessed, selected by a terminal among the multiple APs, and a step of distributing, to the terminal, a token of the AP to be accessed corresponding to the token request.

Abstract: A semiconductor memory device including a memory cell array and a peripheral circuit element configured to control an operation of the memory cell array, and a wiring structure including first and second wiring structures spaced apart from each other on the peripheral circuit element, a first voltage and a second voltage different from the first voltage applied to two opposite ends of the first wiring structure, respectively, and a third voltage different from the first and second voltages applied to the second wiring structure, may be provided. The first wiring structure includes first lines extended in a first direction and spaced apart from each other in a second direction crossing the first direction, the second wiring structure includes second lines extended in the first direction and spaced apart from each other in the second direction, and one of the first lines is between the second lines.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: An electronic device and method are disclosed herein. The electronic device includes a microphone, a camera, an output device, a memory, and a processor. The processor implements the method, including receiving a voice input and/or capturing an image, and analyze the first voice input or the image to determine at least one of a user's intent, emotion, and situation based on predefined keywords and expressions, identifying a category based on the input, selecting first information based on the category, selecting and outputting a first query prompting confirmation of output of the first information, detect a first responsive input to the first query, and when a condition to output the first information is satisfied, output a second query, detecting a second input responsive to the second query, and selectively outputting the first information based on the second input.

Abstract: The present disclosure relates to a skin lifting thread inserting device and, more specifically, to a thread inserting device capable of enhancing a lifting effect by using a single cog thread connected to a plurality of needles. A thread inserting device for a skin lifting treatment according to one embodiment of the present disclosure comprises: first and second needles (10a, 10b); and first and second handles (20a, 20b), wherein the thread (100) extends from the opening (11a) formed at the distal end of the first needle (10a) to the opening (11b) formed at the distal end of the second needle (10b).