Patents by Inventor Kiyoaki Ogawa

Kiyoaki Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SOI substrate manufacturing method
    Patent number: 7368332
    Abstract: This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn formed on a semiconductor member (211) by bonding a first substrate (210) to a second substrate (220), a second step of making the edge portion of an insulating layer (204b) of the structure (230) retreat toward the center so that the edge portion of a semiconductor layer (203c) overhangs the edge portion of an insulating layer (204c), and a third step of moving atoms which form the edge portion of the semiconductor layer (203c) such that the edge portion of a semiconductor layer (203d) covers the periphery of the insulating layer (204c) and connects to the semiconductor member (211).
    Type: Grant
    Filed: December 14, 2005
    Date of Patent: May 6, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryuji Moriwaki, Kiyoaki Ogawa
  • SOI substrate manufacturing method
    Publication number: 20060128078
    Abstract: This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn formed on a semiconductor member (211) by bonding a first substrate (210) to a second substrate (220), a second step of making the edge portion of an insulating layer (204b) of the structure (230) retreat toward the center so that the edge portion of a semiconductor layer (203c) overhangs the edge portion of an insulating layer (204c), and a third step of moving atoms which form the edge portion of the semiconductor layer (203c) such that the edge portion of a semiconductor layer (203d) covers the periphery of the insulating layer (204c) and connects to the semiconductor member (211).
    Type: Application
    Filed: December 14, 2005
    Publication date: June 15, 2006
    Inventors: Ryuji Moriwaki, Kiyoaki Ogawa