Patents by Inventor Kiyohiko Tsutsumi
Kiyohiko Tsutsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240114765Abstract: A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.Type: ApplicationFiled: March 30, 2023Publication date: April 4, 2024Inventors: Yusaku KONISHI, Takahiro FUJIYAMA, Fumiaki KATO, Keigo FURUTA, Kiyohiko TSUTSUMI, Masashi TSUJI, Takao MOTOYAMA
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Patent number: 11711930Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: May 3, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
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Patent number: 11631815Abstract: A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.Type: GrantFiled: December 30, 2019Date of Patent: April 18, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yusaku Konishi, Takahiro Fujiyama, Fumiaki Kato, Keigo Furuta, Kiyohiko Tsutsumi, Masashi Tsuji, Takao Motoyama
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Patent number: 11456336Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: GrantFiled: September 16, 2020Date of Patent: September 27, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Kiyohiko Tsutsumi, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
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Patent number: 11432774Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.Type: GrantFiled: January 24, 2019Date of Patent: September 6, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Chui Joon Heo, Kyung Bae Park, Dongseon Lee, Moon Gyu Han, Takkyun Ro, Youn Hee Lim, Yong Wan Jin, Kiyohiko Tsutsumi
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Publication number: 20210273186Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: ApplicationFiled: May 3, 2021Publication date: September 2, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae PARK, Takkyun RO, Kiyohiko TSUTSUMI, Chul Joon HEO, Yong Wan JIN
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Patent number: 10998514Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: November 2, 2018Date of Patent: May 4, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
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Publication number: 20200411595Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: ApplicationFiled: September 16, 2020Publication date: December 31, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Kiyohiko TSUTSUMI, Kyung Bae PARK, Takkyun RO, Chul Joon HEO, Yong Wan JIN
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Patent number: 10804327Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: GrantFiled: September 20, 2018Date of Patent: October 13, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Kiyohiko Tsutsumi, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
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Publication number: 20200212306Abstract: A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.Type: ApplicationFiled: December 30, 2019Publication date: July 2, 2020Inventors: Yusaku KONISHI, Takahiro FUJIYAMA, Fumiaki KATO, Keigo FURUTA, Kiyohiko TSUTSUMI, Masashi TSUJI, Takao MOTOYAMA
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Publication number: 20190239821Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.Type: ApplicationFiled: January 24, 2019Publication date: August 8, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Chul Joon HEO, Kyung Bae Park, Dongseon Lee, Moon Gyu Han, Takkyun Ro, Youn Hee Lim, Yong Wan Jin, Kiyohiko Tsutsumi
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Publication number: 20190172872Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(° C.)?Tm1(° C.)?Ts1(° C.Type: ApplicationFiled: September 20, 2018Publication date: June 6, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Kiyohiko TSUTSUMI, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
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Publication number: 20190173032Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: ApplicationFiled: November 2, 2018Publication date: June 6, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae PARK, Takkyun RO, Kiyohiko TSUTSUMI, Chul Joon HEO, Yong Wan JIN
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Patent number: 8809924Abstract: According to an aspect of the invention, an imaging device includes a plurality of photoelectric conversion elements and a read-out portion. The photoelectric conversion elements are arranged above a substrate. The read-out portion reads out signal corresponding to charges which are generated from each of the photoelectric conversion elements. Each of the photoelectric conversion elements includes a first electrode that collects the charge, a second electrode that is disposed opposite to the first electrode, a photoelectric conversion layer that generates the charges and disposed between the first electrode and the second electrode, and an electron blocking layer that is disposed between the first electrode and the photoelectric conversion layer. Distance between the first electrodes of adjacent photoelectric conversion elements is 250 nm or smaller. Each of the electron blocking layers has a change in surface potential of ?1 to 3 eV from a first face to a second face.Type: GrantFiled: February 24, 2011Date of Patent: August 19, 2014Assignee: FUJIFILM CorporationInventors: Hideyuki Suzuki, Kiyohiko Tsutsumi
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Publication number: 20120313142Abstract: According to an aspect of the invention, an imaging device includes a plurality of photoelectric conversion elements and a read-out portion. The photoelectric conversion elements are arranged above a substrate. The read-out portion reads out signal corresponding to charges which are generated from each of the photoelectric conversion elements. Each of the photoelectric conversion elements includes a first electrode that collects the charge, a second electrode that is disposed opposite to the first electrode, a photoelectric conversion layer that generates the charges and disposed between the first electrode and the second electrode, and an electron blocking layer that is disposed between the first electrode and the photoelectric conversion layer. Distance between the first electrodes of adjacent photoelectric conversion elements is 250 nm or smaller. Each of the electron blocking layers has a change in surface potential of ?1 to 3 eV from a first face to a second face.Type: ApplicationFiled: February 24, 2011Publication date: December 13, 2012Applicant: FUJIFILM CORPORATIONInventors: Hideyuki Suzuki, Kiyohiko Tsutsumi
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Publication number: 20120126219Abstract: An organic electroluminescent element including: a first electrode; at least one organic deposition layer; and a second electrode, the first electrode, the organic deposition layer, and the second electrode being formed in this order, wherein the organic deposition layer satisfies the relationship 0.093<Ra/t<0.340 where Ra denotes a surface roughness of a surface of the organic deposition layer, the surface being at the side of the second electrode, and t denotes a thickness of the organic deposition layer.Type: ApplicationFiled: July 12, 2010Publication date: May 24, 2012Inventors: Tasuku Sato, Kuniyuki Kaminaga, Masayuki Hayashi, Kiyohiko Tsutsumi, Mitsuhiro Fujita
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Patent number: 7936035Abstract: A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.Type: GrantFiled: August 26, 2008Date of Patent: May 3, 2011Assignee: FUJIFILM CorporationInventors: Yoshiki Maehara, Takashi Goto, Kiyohiko Tsutsumi, Kyohei Ogawa, Takashi Komiyama, Takeshi Senga, Takehiro Kasahara
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Publication number: 20090057659Abstract: A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.Type: ApplicationFiled: August 26, 2008Publication date: March 5, 2009Applicant: FUJIFILM CORPORATIONInventors: Yoshiki MAEHARA, Takashi GOTO, Kiyohiko TSUTSUMI, Kyohei OGAWA, Takashi KOMIYAMA, Takeshi SENGA, Takehiro KASAHARA
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Patent number: 5155378Abstract: A printed circuit board includes at least one code establishing section which is readily removable or separated from the board and also includes printed wiring connected to a voltage source and to a ground. When the code establishing section is removed, the level of an output signal from the voltage source is inverted from the level of the output signal prior to removal of the code establishing section in order to establish a desired unique code. A second arrangement of the apparatus includes a main portion and two removable portions of the board with a pair of voltage sources on the main portion and a ground connection on one of the two removable portions. The method of establishing a unique address code is accomplished by removing one of the removable portions to provide an output signal of a level that is inverted from the level of an original signal. Subsequent removal of the other removable portion provides an output signal of a level that is the same level as the original signal.Type: GrantFiled: June 5, 1989Date of Patent: October 13, 1992Assignee: NCR CorporationInventors: Osamu Takagi, Naoko Ezaki, Kiyohiko Tsutsumi
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Patent number: 5058057Abstract: A communication system uses a two-wire circuit and includes a master terminal and a backup terminal, and a main file and a backup file along with associated link control devices coupled to a plurality of satellite terminals. Each link control device functions both as a monitor and as a communication controller with priority between the link control devices for each of the files and terminals to maintain operation of the system.Type: GrantFiled: February 27, 1989Date of Patent: October 15, 1991Assignee: NCR CorporationInventors: Sadao Morita, Haruo Shimasaki, Kiyohiko Tsutsumi