Abstract: A method of manufacturing an electronic component includes manufacturing a ceramic element including one pair of end surfaces and four side surfaces, forming external electrodes at both end portions of the ceramic element, measuring an initial characteristic value, determining any side surface to be machined among the four side surfaces and then determining, based on stored data, an amount of machining to be performed on the side surface to be machined, and machining, by the determined machining amount, the side surface of the ceramic element, which is determined to be machined, to be flush or substantially flush with the external electrodes.

Abstract: An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

Abstract: A method of manufacturing an electronic component includes manufacturing a ceramic element including one pair of end surfaces and four side surfaces, forming external electrodes at both end portions of the ceramic element, measuring an initial characteristic value, determining any side surface to be machined among the four side surfaces and then determining, based on stored data, an amount of machining to be performed on the side surface to be machined, and machining, by the determined machining amount, the side surface of the ceramic element, which is determined to be machined, to be flush or substantially flush with the external electrodes.

Abstract: Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.

Abstract: An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

Abstract: Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.

Abstract: A NTC thermistor ceramic having higher voltage resistance and a NTC thermistor are provided. The NTC thermistor ceramic either contains manganese and nickel, the manganese/nickel content ratio being is 87/13 to 96/4, or the manganese/cobalt content ratio being is 60/40 or more and 90/10 or less. The NTC thermistor ceramic includes a first phase, which is a matrix, and a second phase composed of plate crystals dispersed in the first phase, the second phase has an electrical resistance higher than that of the first phase and a higher manganese content than the first phase, and the first phase has a spinel structure. A NTC thermistor includes a ceramic element body composed of the NTC thermistor ceramic having the above-described features, internal electrode layers formed inside the ceramic element body, and external electrode layers disposed on two side faces of the ceramic element body.

Abstract: A NTC thermistor ceramic having higher voltage resistance and a NTC thermistor are provided. The NTC thermistor ceramic either contains manganese and nickel, the manganese/nickel content ratio being is 87/13 to 96/4, or the manganese/cobalt content ratio being is 60/40 or more and 90/10 or less. The NTC thermistor ceramic includes a first phase, which is a matrix, and a second phase composed of plate crystals dispersed in the first phase, the second phase has an electrical resistance higher than that of the first phase and a higher manganese content than the first phase, and the first phase has a spinel structure. A NTC thermistor includes a ceramic element body composed of the NTC thermistor ceramic having the above-described features, internal electrode layers formed inside the ceramic element body, and external electrode layers disposed on two side faces of the ceramic element body.

Abstract: A ceramic main body 1 is composed of a (Mn,Ni)3O4- or (Mn,Co)3O4-based ceramic material. A first phase has a spinel structure. A second phase is formed of high-resistance plate crystals. The second phase is present in the first phase in a dispersed state. A heated pathway having a predetermined pattern is formed on a surface of the ceramic main body by the application of heat by laser irradiation. In the heated pathway, the second phase disappears and is crystallographically equivalent to the first phase. The plate crystals of the second phase precipitate at 800° C. or lower in the cooling substep during firing. The formation of the heated pathway facilitates the adjustment of the resistance of an NTC thermistor. Thereby, provided are an NTC thermistor ceramic with a resistance that can be easily adjusted to a lower value even after sintering, a method for producing the NTC thermistor ceramic, and an NTC thermistor.

Abstract: A ceramic main body 1 is composed of a (Mn,Ni)3O4— or (Mn, Co)3O4-based ceramic material. A first phase has a spinel structure. A second phase is formed of high-resistance plate crystals. The second phase is present in the first phase in a dispersed state. A heated pathway having a predetermined pattern is formed on a surface of the ceramic main body by the application of heat by laser irradiation. In the heated pathway, the second phase disappears and is crystallographically equivalent to the first phase. The plate crystals of the second phase precipitate at 800° C. or lower in the cooling substep during firing. The formation of the heated pathway facilitates the adjustment of the resistance of an NTC thermistor. Thereby, provided are an NTC thermistor ceramic with a resistance that can be easily adjusted to a lower value even after sintering, a method for producing the NTC thermistor ceramic, and an NTC thermistor.

Abstract: A lamination-type resistance element includes a laminated sinter having internal electrodes of a first group and internal electrodes of a second group, the first internal electrode group including a plurality of internal electrodes facing each other through a ceramic resistance layer and defining a resistance unit at the portion where the plurality of internal electrodes face each other. A first end of the resistance unit is connected to a first external electrode and the second end is connected to a second external electrode. The second internal electrode group includes a plurality of pairs of internal electrodes in which the inner ends face each other through a gap on the same plane inside the laminated sinter, and a plurality of pairs of gaps in the plurality of internal electrodes are arranged at the same location when seen from one end of the lamination direction of the laminated sinter. Thereby, fine adjustment of a resistance value can be performed.

Abstract: A NTC thermistor ceramic having higher voltage resistance and a NTC thermistor are provided. The NTC thermistor ceramic either contains manganese and nickel, the manganese/nickel content ratio being is 87/13 to 96/4, or the manganese/cobalt content ratio being is 60/40 or more and 90/10 or less. The NTC thermistor ceramic includes a first phase, which is a matrix, and a second phase composed of plate crystals dispersed in the first phase, the second phase has an electrical resistance higher than that of the first phase and a higher manganese content than the first phase, and the first phase has a spinel structure.

Abstract: A lamination-type resistance element includes a laminated sinter having internal electrodes of a first group and internal electrodes of a second group, the first internal electrode group including a plurality of internal electrodes facing each other through a ceramic resistance layer and defining a resistance unit at the portion where the plurality of internal electrodes face each other. A first end of the resistance unit is connected to a first external electrode and the second end is connected to a second external electrode. The second internal electrode group includes a plurality of pairs of internal electrodes in which the inner ends face each other through a gap on the same plane inside the laminated sinter, and a plurality of pairs of gaps in the plurality of internal electrodes are arranged at the same location when seen from one end of the lamination direction of the laminated sinter. Thereby, fine adjustment of a resistance value can be performed.