Abstract: There is provided an LED that can prevent the dissolution and separation of electrodes due to etching in the manufacturing stage and has a high light emission efficiency even when horizontally mounted as well as a method for manufacturing the LED. In a light-emitting diode 100 which is cut from a wafer by dicing and in which a positive electrode 4 and a negative electrode 3 are formed parallel to a pn junction plane 20, the positive electrode 4 provided by a p-side ohmic contact metal layer 41 formed on a surface of a p-type semiconductor layer (p-type GaN layer 2) and a p-side electrode metal layer 42 made of an alloy including gold and nickel, while the negative electrode 3 is provided by an n-side ohmic contact metal layer 31 formed on a surface of an n-type semiconductor layer 1 and an n-side electrode metal layer 32 made of an alloy including gold and nickel. The side surface 7 of a light-emitting diode chip that is brought in contact with a dicing blade is etched by an acid solution.

Abstract: An LED chip 41 is mounted in a horizontal state in such a manner that a PN junction surface 42 is in perpendicular to a unit substrate 45. A side surface of a crystal surface of the LED chip 41 is recessed in such a manner as to have a distance with respect to a surface of the unit substrate 45, or is wholly covered by an electrically insulating film 52 formed of an ultraviolet curable type resin, so that even when the LED chip is in contact with wiring patterns 46, 47 of the unit substrate 45, an electric trouble such as an electrical short is not generated. An electrical connection to the LED chip 41 is performed by connecting thick film electrodes 53, 54 provided on both sides in a perpendicular direction to a PN junction surface, and the wiring patterns 46, 47 on the unit substrate 45 to each other through electrically conductive pastes 56, 57.