Abstract: Focusing on the diversity of how people communicate with each other, the objective of the invention is to provide a signal-responsive device that achieves a digital-based method of communicating that has been nonexistent until now. Provided is a signal response operation device which sends, to a receiving device of a receiving subject, signals from a plurality of sending devices for which senders are not specified, and causes the receiving device to operate. A server registers the receiving device of the receiving subject, and groups and registers each sending device of a plurality of the senders which includes persons who have been selected by or have agreed with the receiving subject. By any of the plurality of senders operating the sending devices, the server sends a signal to the receiving device in response to the sending of a signal from the registered sender.

Abstract: Focusing on the diversity of how people communicate with each other, the objective of the invention is to provide a signal-responsive device that achieves a digital-based method of communicating that has been nonexistent until now. Provided is a signal response operation device which sends, to a receiving device of a receiving subject, signals from a plurality of sending devices for which senders are not specified, and causes the receiving device to operate. A server registers the receiving device of the receiving subject, and groups and registers each sending device of a plurality of the senders which includes persons who have been selected by or have agreed with the receiving subject. By any of the plurality of senders operating the sending devices, the server sends a signal to the receiving device in response to the sending of a signal from the registered sender.

Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.

Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.

Abstract: A modified polyvinyl alcohol (PVA) protected with a protecting group of the present invention is one wherein an amount of high-molecular weight body components of the modified polyvinyl alcohol having a weight-average molecular weight of 250,000 or more as determined by polyethylene glycol standards according to a gel permeation chromatography is 1000 ppm or less in the modified polyvinyl alcohol. The modified PVA is prepared by removing a metal ion and an acid from the modified PVA such as acetalized PVA with ion exchange treatment and then heat-treating at 80° C. or higher. An auxiliary for fine pattern formation of the present invention comprises the aforementioned modified PVA, a water-soluble crosslinking agent, and water or a mixed solvent of water and a water-soluble organic solvent. The auxiliary for fine pattern formation is applied over a resist pattern 3 and a coated layer 4 is formed thereon.

Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Abstract: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Abstract: A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied on to resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.

Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Abstract: The present invention provides a method of forming a fine pattern, comprising the steps of forming a resist pattern 3 made of a chemically amplified photoresist on a substrate 1 with a diameter of 6 inches or more, applying a fine pattern forming material containing a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solvent of water and a water-soluble organic solvent to form a coated layer 4, baking the chemically amplified photoresist pattern and the coated layer, and developing the coated layer after baking, wherein the water-soluble resin in the fine pattern forming material is a water-soluble resin, the peak temperature of heat of fusion of which in a DSC curve is higher than the baking temperature in the above baking step and simultaneously higher than 130° C.

Abstract: A modified polyvinyl alcohol (PVA) protected with a protecting group of the present invention is one wherein an amount of high-molecular weight body components of the modified polyvinyl alcohol having a weight-average molecular weight of 250,000 or more as determined by polyethylene glycol standards according to a gel permeation chromatography is 1000 ppm or less in the modified polyvinyl alcohol. The modified PVA is prepared by removing a metal ion and an acid from the modified PVA such as acetalized PVA with ion exchange treatment and then heat-treating at 80° C. or higher. An auxiliary for fine pattern formation of the present invention comprises the aforementioned modified PVA, a water-soluble crosslinking agent, and water or a mixed solvent of water and a water-soluble organic solvent. The auxiliary for fine pattern formation is applied over a resist pattern 3 and a coated layer 4 is formed thereon.

Abstract: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.

Abstract: A cellulose fabric having a sebum absorbing performance, which maintains its performance even after repeated washing in which a compound having a nonionic surface activity is fixed to a cellulose fabric. A sebum absorbing cellulose fabric is prepared by treating a cellulose fabric with an aqueous mixed solution of a nonionic surfactant and a cross-linking agent having glycidyl ether groups, or by treating a cellulose fabric with an aqueous solution of a glycidyl ether having a nonionic surface activity in the molecule thereof.