Abstract: A semiconductor device includes: a first board that has a first end surface and a second end surface opposite to the first end surface; a second board that is attached to the second end surface of the first board; a plurality of first electrodes that are provided on the first end surface; a second electrode that is provided on the second end surface and electrically coupled to an electrode of the second board; an internal wiring that is provided inside the first board and electrically coupled to the second electrode; a plurality of third electrodes that are provided inside the first board and electrically couple the first electrodes to the internal wiring; and a strain sensor that is provided inside the first board and measures a strain generated in the first board, in which a linear expansion coefficient of each of the third electrodes is larger than a linear expansion coefficient of the first board.

Abstract: A semiconductor element includes a plurality of microlenses provided on a main surface to collect light, a plurality of conductive electrodes provided on a back surface of the main surface, a photoelectric converter to which the light collected by the plurality of microlenses is guided, and a strain sensor provided on the same layer as the photoelectric converter to detect a strain. A solid-state imaging apparatus includes the semiconductor element, a transparent member, an adhesive layer that covers the plurality of microlenses and adheres to the transparent member, and a plurality of external connection electrodes electrically connected to the plurality of conductive electrodes, respectively.

Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and

Abstract: A solid-state imaging device includes a solid-state imaging element and a substrate fixed to the solid-state imaging element by a sealing resin on a surface on an opposite side of a light receiving surface of the solid-state imaging element, an outer edge of the substrate seen from the light receiving surface side of the solid-state imaging element is positioned within an outer edge of the solid-state imaging element and an outer edge of the sealing resin seen from the light receiving surface side of the solid-state imaging element is positioned within the outer edge of the solid-state imaging element. The sealing resin includes a first sealing resin and a second sealing resin not contacting the first sealing resin to seal the components.

Abstract: A gas sensor device includes: a substrate having a cavity structure; a gas sensor disposed in a recess portion of the cavity structure of the substrate; and a thin film bonded to the substrate, covering the recess portion, and being impermeable to liquid and permeable to gas.

Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

Abstract: A semiconductor device includes: a first board that has a first end surface and a second end surface opposite to the first end surface; a second board that is attached to the second end surface of the first board; a plurality of first electrodes that are provided on the first end surface; a second electrode that is provided on the second end surface and electrically coupled to an electrode of the second board; an internal wiring that is provided inside the first board and electrically coupled to the second electrode; a plurality of third electrodes that are provided inside the first board and electrically couple the first electrodes to the internal wiring; and a strain sensor that is provided inside the first board and measures a strain generated in the first board, in which a linear expansion coefficient of each of the third electrodes is larger than a linear expansion coefficient of the first board.

Abstract: A semiconductor element includes a plurality of microlenses provided on a main surface to collect light, a plurality of conductive electrodes provided on a back surface of the main surface, a photoelectric converter to which the light collected by the plurality of microlenses is guided, and a strain sensor provided on the same layer as the photoelectric converter to detect a strain. A solid-state imaging apparatus includes the semiconductor element, a transparent member, an adhesive layer that covers the plurality of microlenses and adheres to the transparent member, and a plurality of external connection electrodes electrically connected to the plurality of conductive electrodes, respectively.

Abstract: A solid-state imaging device includes a solid-state imaging element and a substrate fixed to the solid-state imaging element by a sealing resin on a surface on an opposite side of a light receiving surface of the solid-state imaging element, an outer edge of the substrate seen from the light receiving surface side of the solid-state imaging element is positioned within an outer edge of the solid-state imaging element and an outer edge of the sealing resin seen from the light receiving surface side of the solid-state imaging element is positioned within the outer edge of the solid-state imaging element. The sealing resin includes a first sealing resin and a second sealing resin not contacting the first sealing resin to seal the components.

Abstract: An optical device is equipped with a light receiving region 16a and a peripheral circuit region 22 located around the light receiving region 16a on a major surface of an light receiving element 11a; electrodes for external connection 15 electrically connected to the peripheral circuit region 22 formed on a back surface opposite to the major surface of the light receiving element 11a; a transparent member 12 covering the light receiving region 16a adhered on the major surface of the light receiving element 11a with a light-transmitting adhesive 13; and a molding resin 14 for coating side surfaces of the transparent member 12 and the major surface of the light receiving element 11a excluding the region covered with the transparent member 12.

Abstract: An optical device is equipped with a light receiving region 16a and a peripheral circuit region 22 located around the light receiving region 16a on a major surface of an light receiving element 11a; electrodes for external connection 15 electrically connected to the peripheral circuit region 22 formed on a back surface opposite to the major surface of the light receiving element 11a; a transparent member 12 covering the light receiving region 16a adhered on the major surface of the light receiving element 11a with a light-transmitting adhesive 13; and a molding resin 14 for coating side surfaces of the transparent member 12 and the major surface of the light receiving element 11a excluding the region covered with the transparent member 12.

Abstract: A solid-state image sensing element includes an effective pixel section in a central area of a light receiving surface thereof, and a ridge-shaped protruding portion is provided around the effective pixel section. A liquid transparent adhesive is applied on the effective pixel section, and a light transparent substrate is placed thereon. The light transparent substrate is in contact with the protruding portion, and is therefore prevented from sliding with the liquid adhesive serving as a lubricant. Thus, the light transparent substrate can be fixed at a predetermined position.

Abstract: An optical device is equipped with a light receiving region 16a and a peripheral circuit region 22 located around the light receiving region 16a on a major surface of an light receiving element 11a; electrodes for external connection 15 electrically connected to the peripheral circuit region 22 formed on a back surface opposite to the major surface of the light receiving element 11a; a transparent member 12 covering the light receiving region 16a adhered on the major surface of the light receiving element 11a with a light-transmitting adhesive 13; and a molding resin 14 for coating side surfaces of the transparent member 12 and the major surface of the light receiving element 11a excluding the region covered with the transparent member 12.

Abstract: An optical device includes a semiconductor substrate (11) on which a light receiving part (12) (or a light emitting part) and electrodes (13) are formed, and a translucent plate (2) bonded on the light receiving part (12) with a translucent adhesive (5), the semiconductor substrate (11) having a plurality of convex portions (31) formed so as to separate the light receiving part (12) and the electrodes (13) and have proper gaps (32) therebetween.

Abstract: An optical device includes a semiconductor substrate (11) on which a light receiving part (12) (or a light emitting part) and electrodes (13) are formed, and a translucent plate (2) bonded on the light receiving part (12) with a translucent adhesive (5), the semiconductor substrate (11) having a plurality of convex portions (31) formed so as to separate the light receiving part (12) and the electrodes (13) and have proper gaps (32) therebetween.

Abstract: An optical device includes a substrate, an optical element, a translucent component, a plurality of first terminals and a sealant. The sealant is located lower than the top surface of the translucent component. The top surface of the translucent component is exposed out of the sealant, while the side surface of the translucent component is covered with the sealant.

Abstract: An optical device includes a semiconductor substrate (11) on which a light receiving part (12) (or a light emitting part) and electrodes (13) are formed, and a translucent plate (2) bonded on the light receiving part (12) with a translucent adhesive (5), the semiconductor substrate (11) having a plurality of convex portions (31) formed so as to separate the light receiving part (12) and the electrodes (13) and have proper gaps (32) therebetween.

Abstract: A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

Abstract: A solid-state imaging element includes a semiconductor substrate formed with a valid pixel section including a plurality of photodetector sections, spacers formed on the valid pixel section, a transparent adhesive filling gaps among the spacers, and a transparent substrate which is bonded onto the spacers using the transparent adhesive and covers the valid pixel section when viewed in plan. Electrode pad sections are formed in a region of the semiconductor substrate located outside the valid pixel section.