Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

Abstract: A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

Abstract: In a magnetoresistance apparatus including a first functional layer and a second functional layer magnetically connected to the first functional layer, an overlapping ratio of the second functional layer onto the first functional layer is approximately 0 to 10 percent.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: In a production process of an MR head using the tunnel junction film basically consisting of a free layer, a barrier layer, and a pinned layer, the resistance between the free layer and the pined layer reduced beforehand and increased afterward up to a resistance value necessary when actually used. While the resistance between the free layer and the pinned layer is low, current can easily flow, suppressing charge up, thus preventing insulation destruction of the barrier layer. This significantly increases a production yield of a recording/reproduction head using a ferromagnetic tunnel junction element.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

Abstract: A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

Abstract: A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion.

Abstract: When a relay (21) is controlled, an AC voltage (1) may be rectified in a full-wave rectification fashion. In a voltage-doubler rectification fashion, and a rectified output supplied to a main converter (6) or the AC voltage (1) may be rectified in a half-wave rectification fashion, and a rectified output supplied to a standby converter (10). A just detection circuit (23) detects a rectified voltage of the standby side, and a detection circuit (24) may detect a rectified voltage supplied to the main converter (6). The first and second voltage detection circuits (23) and (24) control operations of relay drive circuits (21D and 22D) based on both detection signals so that any one of two relay contacts (21a and 22a) may be turned on.

Abstract: A power supply apparatus includes a variable frequency oscillating circuit, a driver, a soft start circuit, switching elements for receiving a switching signal, a resonating capacitor connected at a connection point of the switching elements via a primary coil of a transformer, a rectifying circuit provided at a secondary coil of the transformer, an amplifier for comparing an output voltage, Vb obtained at the rectifying circuit and a reference voltage, Vref, a photo-coupler for controlling an impedance of an oscillating element of a variable frequency oscillating circuit based on the comparison output, and a charge voltage control circuit for controlling an oscillation frequency when the variable oscillation circuit is initially driven. A frequency control signal when power is ON is made nonlinear relative to time. As a result, a change in oscillation frequency immediately after power is ON is made gentle, and a rapid change in current that flows in a primary coil is eliminated.

Abstract: A compound magnetoresistive effect head has a dedicated playback head formed by a magnetoresistive effect element disposed between magnetic shields, with a magnetic gap therebetween, and a dedicated recording head having a function of performing recording by a magnetic field generated in a gap provided between magnetic poles. An electrode film for the purpose of causing a current to flow in a ferromagnetic film and a magnetoresistive effect film for stabilizing magnetization of the magnetoresistive effect film is formed so as to be magnetically and electrically connected to both ends of the magnetoresistive effect film, and a flattening film is provided between the first and second magnetic separation films in the magnetoresistive effect element height direction of the playback head.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A DC-DC converter includes a switching unit having a pair of switching devices or transistors, a resonant circuit comprising a capacitor, an inductor, and a primary coil of a converter transformer which serves as an inductor, a smoothing and rectifying circuit connected to a load in the secondary, an error amplifier for the output voltage, and a variable oscillator for varying the switching frequency according to the error voltage. The output of the variable oscillator circuit is supplied to the switching devices to provide a stabilized output voltage from the smoothing and rectifying circuit. The switching frequency during light loading is set at a frequency more than the resonant frequency which is mainly defined by the inductance and the interwinding capacitance of the secondary coil.

Abstract: A DC-DC converter includes a switching unit having a pair of switching devices or transistors, a resonant circuit comprising a capacitor, an inductor, and a primary coil of a converter transformer which serves as an inductor, a smoothing and rectifying circuit connected to a load in the secondary, an error amplifier for the output voltage, and a variable oscillator for varying the switching frequency according to the error voltage. The output of the variable oscillator circuit is supplied to the switching devices to provide a stabilized output voltage from the smoothing and rectifying circuit. The switching frequency during light loading is set at a frequency more than the resonant frequency which is mainly defined by the inductance and the interwinding capacitance of the secondary coil.

Abstract: A non-control detection protecting circuit is prevented from malfunctioning when a switching converter is started. A latch control circuit 40 makes a non-control detection discrimination signal SDT invalid during a soft start operation. Moreover, a driving circuit 33 stops driving signals SD1 and SD2 for a predetermined period after it is detected that an overload state is set based on the non-control detection discrimination signal SDT, and a soft start circuit 35 is then controlled to carry out the soft start operation. Thus, an intermittent operation is carried out. Furthermore, the soft start control circuit 35 is controlled by the intermittent operation control circuit 50, resulting in the completion of the discharge of a capacitor 36 which sets a soft start period when the soft start operation in the intermittent operation is started.