Patents by Inventor Kiyoko Nishikawa

Kiyoko Nishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating semiconductor devices
    Patent number: 5733821
    Abstract: A downflow-type ashing apparatus comprises a microwave guide for feeding microwaves, a plasma generating chamber for generating O.sub.2 plasmas by the microwaves fed into the microwave guide, and an ashing reaction chamber for ashing by the oxygen atom radicals in the O.sub.2 plasmas. The entire inside of the wall of the Al ashing reaction chamber is coated with quartz film 16. An Al shower head with a number of small holes formed so as to form a shower for passing the oxygen atom radicals from the plasma generating chamber into the ashing reaction chamber has the entire surface coated with quartz film. The apparatus can conduct a required treatment at a stable high treating rate using oxygen atom radicals in oxygen plasmas generated by radio frequencies or microwaves.
    Type: Grant
    Filed: September 3, 1996
    Date of Patent: March 31, 1998
    Assignee: Fujitsu Limited
    Inventor: Kiyoko Nishikawa
  • Apparatus and process for fabricating semiconductor devices
    Patent number: 5575883
    Abstract: A downflow-type ashing apparatus comprises a microwave guide for feeding microwaves, a plasma generating chamber for generating O.sub.2 plasmas by the microwaves fed into the microwave guide, and an ashing reaction chamber for ashing by the oxygen atom radicals in the O.sub.2 plasmas. The entire inside of the wall of the Al ashing reaction chamber is coated with quartz film 16. An Al shower head with a number of small holes formed so as to form a shower for passing the oxygen atom radicals from the plasma generating chamber into the ashing reaction chamber has the entire surface coated with quartz film. The apparatus can conduct a required treatment at a stable high treating rate using oxygen atom radicals in oxygen plasmas generated by radio frequencies or microwaves.
    Type: Grant
    Filed: May 5, 1994
    Date of Patent: November 19, 1996
    Assignee: Fujitsu Limited
    Inventor: Kiyoko Nishikawa