Abstract: A first magnetoresistive (MR) element of an MR element portion of the MR sensor has line patterns of a ferromagnetic thin film, that are arranged in parallel to each other, and connecting patterns that connect ends of the line patterns. The resistance of the MR element is set only by the length of the ferromagnetic thin film, irrespective of formation and removal of an Au layer. The connecting patterns, that connect between the line patterns of the ferromagnetic thin film, are designed in a configuration so as not to be influenced by a magnetic field which may cause variation of resistance value of the ferromagnetic thin film of the line pattern. The end of the connecting portion pattern is formed into an angle configuration having a portion oriented at a 45.degree. angle relative to the longitudinal direction of the line pattern. This avoids influence of the applied magnetic field. Adjacent to the outermost line pattern, an adjacent pattern is arranged.

Abstract: An integrated magnetoresistive sensor includes a magnetoresistive element portion in which a plurality of resistors, each having a plurality of magnetoresistive elements, are aligned in an array. The magnetoresistive elements each have a single layer ferromagnetic thin film. The resistors are arranged so that two adjacent resistors have orthogonal maximum detection directions, respectively, and the plurality of resistors are connected to constitute a electrical circuit having a pair of opposing nodes. A comparison circuit portion compares outputs from the two opposing nodes and outputs a comparison result. The ferromagnetic thin film has NiFeCo as a major component. One of the plurality of resistors may have a different resistance when no magnetic field is applied relative to the remaining resistors.