Abstract: According to one embodiment, a semiconductor memory device includes a first insulating layer; a first conductive layer provided in the first insulating layer and extending in the first direction; a second conductive layer extending in the first direction and provided adjacent to the first conductive layer in a second direction; and a contact plug coupled to one surface of the first conductive layer in a third direction. Thicknesses in the third direction of portions of the first and second conductive layers that overlap the contact plug in the third direction are smaller than thicknesses in the third direction of portions of the first and second conductive layers that do not overlap the contact plug in the third direction.

Abstract: According to one embodiment, a semiconductor memory device includes a first insulating layer; a first conductive layer provided in the first insulating layer and extending in the first direction; a second conductive layer extending in the first direction and provided adjacent to the first conductive layer in a second direction; and a contact plug coupled to one surface of the first conductive layer in a third direction. Thicknesses in the third direction of portions of the first and second conductive layers that overlap the contact plug in the third direction are smaller than thicknesses in the third direction of portions of the first and second conductive layers that do not overlap the contact plug in the third direction.

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.

Abstract: A semiconductor device includes a plurality of first electrode films stacked in a first direction and electrically isolated from each other; a plurality of semiconductor members extending in the first direction through the plurality of first electrode films; a first conductive film including a first surface and connected to the plurality of semiconductor members on the first surface; a first insulating film spaced from the first conductive film on a second surface of the first conductive film opposite to the first surface; a first edge member disposed in an edge area that surrounds an element area including the first electrode film, the semiconductor member, and the first conductive film; and a conductive first plug provided between the first edge member and the element area in the edge area and is in contact with the first insulating film.

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.

Abstract: According to one embodiment, a semiconductor memory device includes a first insulating layer; a first conductive layer provided in the first insulating layer and extending in the first direction; a second conductive layer extending in the first direction and provided adjacent to the first conductive layer in a second direction; and a contact plug coupled to one surface of the first conductive layer in a third direction. Thicknesses in the third direction of portions of the first and second conductive layers that overlap the contact plug in the third direction are smaller than thicknesses in the third direction of portions of the first and second conductive layers that do not overlap the contact plug in the third direction.

Abstract: A semiconductor memory device according to an embodiment includes a slit-side end portion of an insulating layer includes a main body of the insulating layer, a first thin layer thinner than the main body and extending from an end portion closer to an upper surface of the main body, the end portion facing the slit, toward the slit, and a second thin layer thinner than the main body and extending from an end portion closer to a lower surface of the main body, the end portion facing the slit, toward the slit, and the insulating layer includes an air gap layer surrounded by the main body, the first thin layer, and the second thin layer in the slit-side end portion.

Abstract: A semiconductor memory device according to an embodiment includes a slit-side end portion of an insulating layer includes a main body of the insulating layer, a first thin layer thinner than the main body and extending from an end portion closer to an upper surface of the main body, the end portion facing the slit, toward the slit, and a second thin layer thinner than the main body and extending from an end portion closer to a lower surface of the main body, the end portion facing the slit, toward the slit, and the insulating layer includes an air gap layer surrounded by the main body, the first thin layer, and the second thin layer in the slit-side end portion.

Abstract: In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each second insulator of the second insulators has a first side face adjacent to one of the conductors via a first air gap, a second side face adjacent to one of the conductors via a second air gap, first lower faces in contact with the first insulator, and second lower faces provided above the first insulator via third air gaps.

Abstract: In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each second insulator of the second insulators has a first side face adjacent to one of the conductors via a first air gap, a second side face adjacent to one of the conductors via a second air gap, first lower faces in contact with the first insulator, and second lower faces provided above the first insulator via third air gaps.

Abstract: A hydrazine compound of the formula (I) or its salt: ##STR1## wherein A is a benzofuranyl group which may be substituted, a quinolinyl group which may be substituted, a benzothienyl group which may be substituted, a benzothiazolyl group which may be substituted, a thienothienyl group which may be substituted, a dihydrothienothienyl group which may be substituted, a dihydrocyclopentathienyl group which may substituted, a tetrahydrobenzothienyl group which may be substituted, an indanyl group which may be substituted, or a hexahydroindanyl group which may be substituted, W is a hydrogen atom, a cyano group, --COCOOR', --S--N(R")COOR' or --CH.sub.

Abstract: The present invention relates to a hydrazone compound of the formula (I) or its salt, a process for its preparation, an intermediate of the formula (II-5), a pesticidal composition containing said hydrazone compound or its salt as the active ingredient, and a pesticidal method of applying an effective amount thereof: ##STR1##

Abstract: An imidazolidine derivative having the formula (I) or its salt: ##STR1## wherein X is an alkyl group which may be substituted, an alkenyl group which may be substituted, an alkynyl group which may be substituted, ##STR2## (in which each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 is independently a hydrogen atom or an alkyl group, R.sup.5 is an alkyl group which may be substituted with a halogen atom, a cycloalkyl group which may be substituted or a phenyl group which may be substituted, W is an oxygen atom or a sulfur atom, and each of k, l, m and n is independently 0 or 1, provided that (a) case where all of k, l and m are 0 at the same time and (b) case where m and n are 0 at the same time and R.sup.5 is an alkyl group which may be substituted with a halogen atom, are excluded), or ##STR3## group (in which each of R.sup.6 and R.sup.7 is independently a hydrogen atom or an alkyl group, each of R.sup.8 and R.sup.9 is independently an alkyl gorup, R.sup.

Abstract: A benzoylurea compound having the formula: ##STR1## wherein each of X.sub.1 and X.sub.2 is a hydrogen atom, a halogen atom or a methyl group, provided that X.sub.1 and X.sub.2 are not simultanously hydrogen atoms, Y is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, a --CO.sub.2 R.sub.1 group wherein R.sub.1 is a hydrogen atom, a cation or an alkyl group, or a --OR.sub.1 group wherein R.sub.1 is as defined above, A.sub.1 is .dbd.N-- or ##STR2## wherein Y is as defined above, W is an oxygen atom, a sulfur atom or ##STR3## wherein R.sub.1 is as defined above, k is an integer of from 1 to 3, l is 0 or 1, and Ar is ##STR4## wherein Z is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, an alkoxy group which may be substituted by halogen, a nitro group, a cyano group or a --S(O).sub.n R.sub.2 group wherein R.sub.2 is an alkyl group which may be substituted by halogen and n is 0, 1 or 2, A.sub.

Abstract: A benzoylurea compound having the formula: ##STR1## wherein each of X.sub.1 and X.sub.2 is a hydrogen atom, a halogen atom or a methyl group, provided that X.sub.1 and X.sub.2 are not simultaneously hydrogen atoms, Y is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, a --CO.sub.2 R.sub.1 group wherein R.sub.1 is a hydrogen atom, a cation or an alkyl group, or a --OR.sub.1 group wherein R.sub.1 is as defined above, A.sub.1 is .dbd.N--or ##STR2## wherein Y is as defined above, W is an oxygen atom, a sulfur atom or ##STR3## wherein R.sub.1 is as defined above, k is an integer of from 1 to 3, l is 0 or 1, and Ar is ##STR4## wherein Z is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, an alkoxy group which may be substituted by halogen, a nitro group, a cyano group or a --S(O).sub.n R.sub.2 group wherein R.sub.2 is an alkyl group which may be substituted by halogen and n is 0, 1 or 2, A.sub.

Abstract: An organophosphorus compound having the formula: ##STR1## wherein X is ##STR2## Z is an oxygen atom or a sulfur atom, and each of R.sub.1 and R.sub.2 is an alkyl group which may be substituted by halogen, alkoxy or alkylthio. The compound is useful as an insecticide, miticide, nematicide or soil pesticide.

Abstract: An organophosphorus compound having the formula: ##STR1## wherein each of X.sub.1, X.sub.2 and X.sub.3 is a hydrogen atom; an alkyl, alkoxy or alkenyl group which may be substituted by halogen, alkoxy, alkylthio, cycloalkyl or phenyl; a phenyl group which may be substituted by halogen; or a cycloalkyl group, each of Y.sub.1, Y.sub.2 and Y.sub.3 is an oxygen atom or a sulfur atom, Z is a carbonyl group; or a methylene group which may be substituted by a cycloalkyl group, by a phenyl group which may be substituted by halogen, or by an alkyl, alkoxy or alkenyl group which may be substituted by halogen, alkoxy alkylthio, cycloalkyl or phenyl, and each of R.sub.1 and R.sub.2 is an alkyl group which may be substituted by halogen, alkoxy or alkylthio.

Abstract: An organophosphorus compound represented by the general formula: ##STR1## where each of X.sub.1 and X.sub.3 is a hydrogen atom; an alkyl or alkoxy group which may be substituted by halogen, alkoxy, alkylthio, phenoxy, halogenated phenoxy, phenylthio or halogenated phenylthio; a carboxyl group; an alkoxycarbonyl group; or a phenyl group which may be substituted by halogen, each of X.sub.2 and X.sub.4 is a hydrogen atom or an alkyl group, provided that X.sub.2 and X.sub.3 may together form an alkylene group, each of Y.sub.1, Y.sub.2 and Z is an oxygen atom or a sulfur atom, and each of R.sub.1 and R.sub.2 is an alkyl group.