Abstract: A method for producing a silicon nitride substrate includes a raw material powder preparation step of preparing a raw material powder containing a silicon powder, a rare earth element compound, and a magnesium compound, wherein, when the amount of silicon in the raw material powder is expressed in terms of a silicon nitride content, the raw material powder contains the rare earth element compound at 1 mol % to 7 mol % in terms of an oxide content and contains the magnesium compound at 8 mol % to 15 mol % in terms of an oxide content; a sheet forming step of forming the raw material powder into a sheet article; a nitriding step of heating the sheet article in a nitrogen atmosphere at 1200° C. to 1500° C. and nitriding silicon contained in the sheet article; and a sintering step of sintering the sheet article under a nitrogen atmosphere after the nitriding step.

Abstract: A method for producing a silicon nitride substrate includes a raw material powder preparation step of preparing a raw material powder containing a silicon powder, a rare earth element compound, and a magnesium compound, wherein, when the amount of silicon in the raw material powder is expressed in terms of a silicon nitride content, the raw material powder contains the rare earth element compound at 1 mol % to 7 mol % in terms of an oxide content and contains the magnesium compound at 8 mol % to 15 mol % in terms of an oxide content; a sheet forming step of forming the raw material powder into a sheet article; a nitriding step of heating the sheet article in a nitrogen atmosphere at 1200° C. to 1500° C. and nitriding silicon contained in the sheet article; and a sintering step of sintering the sheet article under a nitrogen atmosphere after the nitriding step.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 ?m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 ?m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 ?m to boron carbide particles having a particle diameter of at most 5 ?m, is from 0.02 to 0.6.

Abstract: It is an object to provide an aluminum oxide-based sintered body and a manufacturing method thereof, according to which all of wear resistance, strength and fracture toughness can be exhibited to a high degree in a single sintered body, and there is provided a method of manufacturing a multi-layer aluminum oxide sintered body having high strength and wear resistance as well as high fracture toughness, that has a structure of at least two layers in which a surface layer is a high-strength wear-resistant layer comprising isometric crystals having a small grain size, and an inner part is a high-fracture-toughness layer constituted from anisotropic crystals, the method comprising the steps of (1) preparing a layered body by forming a layer of an aluminum oxide material that has a purity of at least 90% and contains a grain growth inhibiting agent and a layer of an aluminum oxide material that has a purity of at least 90% and contains a grain growth promoting agent, (2) carrying out setting such that the sintering

Abstract: The present invention provides a novel polishing material with which silicon nitride ceramic and sialon ceramic can be polished at high efficiency through a tribochemical reaction, and a method for manufacturing thereof, said material is used for polishing a silicon nitride ceramic or sialon ceramic as a material being polished, through a tribochemical reaction, and consists of a ceramic sinter containing an element that causes the ceramic being polished to undergo a dissolution reaction at the grain boundary of the sinter, within the particles thereof, and/or in pores thereof.

Abstract: The present invention relates to a method for producing a porous silicon nitride sintered body having high strength and low thermal conductivity, which comprises of adding more than 10 volume % of rodlike beta-silicon nitride single crystals with a larger mean diameter than that of a silicon nitride raw powder into a mixture comprising the silicon nitride raw powder and a sintering additive, preparing a formed body with rodlike beta-silicon nitride single crystals oriented parallel to the casting plane according to a forming technique such as sheet casting and extrusion forming, sintering said formed body to develop elongated silicon nitride grains from the added rodlike beta-silicon nitride single crystals as nuclei and obtain the sintered body with the elongated grains being dispersed in a complicated state.

Abstract: An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.

Abstract: The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.

Abstract: The present invention relates to a silicon nitride sintered body having a remarkably increased strain-to-fracture, a low elasticity and high strength, characterized by consisting of a layered structure of alternating porous silicon nitride layers 1 to 1000 .mu.m thick with a porosity of 5 to 70 volume % and dense silicon nitride layers 1 to 1000 .mu.m thick with a porosity of less than 5 volume %, being layered as materials with optional tiers. In addition, this invention relates to a method for producing the silicon nitride sintered body as described above, which comprises of forming dense layers and porous layers by sheet casting or extrusion forming so as to prepare the layers to be capable of 1 to 1000 .mu.m thick after sintering, stacking them to obtain layered materials with optional tiers and sintering them at 1600.degree. to 2100 .degree. C. under a nitrogen atmosphere.

Abstract: The present invention provides a method for producing an aluminum nitride sintered body having excellent characteristics and an aluminum nitride powder conveniently and inexpensively. The present invention relates to a method for production of an aluminum nitride sintered body comprising forming a metal aluminum power into a thin-plate like shape, heating the formed body to a temperature not exceeding the melting point of aluminum in a vacuum atmosphere, and then sintering it under N.sub.2 pressure (1-150 kg/cm.sup.2), and a method for production of an aluminum nitride powder comprising heating a metal aluminum powder to a temperature not exceeding the melting point of aluminum in a vacuum atmosphere, sintering it under N.sub.2 pressure (1-150 kg/cm.sup.2, and further cooling and pulverizing it.

Abstract: A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.

Abstract: A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.

Abstract: A sintered ceramic article formed mainly of alumina, having a chemical composition of from 1 to 10% by weight of La.sub.2 O.sub.3, from 0.01 to 0.1% by weight of SiO.sub.2, and the balance of Al.sub.2 O.sub.3 and containing these components in the form of corundum (.alpha.-Al.sub.2 O.sub.3) and lanthanum .beta.-alumina (La.sub.2 O.sub.3.llAl.sub.2 O.sub.3) and a method for the production of a sintered ceramic article formed mainly of alumina, comprising the steps of shaping a mixture of Al.sub.2 O.sub.3, La.sub.2 O.sub.3, and SiO.sub.2, calcining the shaped mixture in the air at a temperature in the range of from 600.degree. C. to 1000.degree. C., and further firing the calcined shaped mixture to a temperature in the range of from 1400.degree. C. to 1800.degree. C.