Patents by Inventor Kiyoshi Hirata
Kiyoshi Hirata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9799691Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: October 18, 2016Date of Patent: October 24, 2017Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Publication number: 20170040366Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: ApplicationFiled: October 18, 2016Publication date: February 9, 2017Inventor: Kiyoshi Hirata
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Patent number: 9520432Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: August 27, 2015Date of Patent: December 13, 2016Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Publication number: 20150372032Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: ApplicationFiled: August 27, 2015Publication date: December 24, 2015Inventor: Kiyoshi Hirata
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Patent number: 9159855Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: June 19, 2014Date of Patent: October 13, 2015Assignee: SONY CORPORATIONInventor: Kiyoshi Hirata
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Publication number: 20140299921Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: ApplicationFiled: June 19, 2014Publication date: October 9, 2014Inventor: Kiyoshi Hirata
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Patent number: 8816416Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: April 3, 2013Date of Patent: August 26, 2014Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Patent number: 8598640Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 17, 2011Date of Patent: December 3, 2013Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 8431976Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: January 12, 2012Date of Patent: April 30, 2013Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Publication number: 20120104533Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: ApplicationFiled: January 12, 2012Publication date: May 3, 2012Applicant: Sony CorporationInventor: Kiyoshi Hirata
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Patent number: 8115268Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: August 7, 2009Date of Patent: February 14, 2012Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Publication number: 20110298024Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: August 17, 2011Publication date: December 8, 2011Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 8017984Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 13, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7935563Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: May 3, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7928487Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 28, 2008Date of Patent: April 19, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7821093Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: October 26, 2010Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7791118Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 7, 2010Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7642614Abstract: Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: GrantFiled: February 21, 2007Date of Patent: January 5, 2010Assignee: Sony CorporationInventor: Kiyoshi Hirata
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Publication number: 20090294884Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.Type: ApplicationFiled: August 7, 2009Publication date: December 3, 2009Applicant: SONY CORPORATIONInventor: Kiyoshi Hirata
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Publication number: 20090078977Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: November 25, 2008Publication date: March 26, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun