Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.

Abstract: A photo mask includes a transmission region, a half-tone region, and a light-shielding region, and is formed in a one-time writing method. An outer periphery of each of a plurality of transmission regions is surrounded by the half-tone region. In a densest pattern region having a plurality of transmission regions arranged at a pitch of at most 0.32 &mgr;m which is smallest in the photo mask, the half-tone region surrounding an outer periphery of each of a pair of transmission regions is configured such that the light-shielding film is positioned between a pair of transmission regions adjacent to each other. Therefore, for a tri-tone mask, a photo mask, free from a forbidden region for all pitches, a method of manufacturing a electronic device, and a method of manufacturing a photo mask result.

Abstract: The high-transmittance halftone phase shift mask is structured, in a first phase shift pattern region, with a transmission region exposing a transparent substrate and having a rectangular (square) two-dimensional shape; a phase shift region surrounding the transmissive region exposing halftone phase shift film and having a rectangular shape two-dimensional shape; and a light shielding region surrounding the phase shift region and formed of a light shielding film provided on the halftone phase shift film. With the present mask, a high-transmittance halftone phase shift mask that can transfer desired pattern clearly on the photosensitive resin and a method for producing semiconductor devices using the mask can be attained.