Abstract: An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.

Abstract: A cusp field is applied between a plasma source of a vacuum chamber of a plasma anodization system and a substance such as a semiconductor substrate or a metal plate to be oxidized so that the substance may not be adversely affected by the plasma. The temperature control can be conducted independently of the plasma generating condition because the substance to be treated is not adversely affected by the plasma in a direct manner.

Abstract: A process for forming an electrochromic film to be used in an electrochromic device is provided. The process includes a step of introducing a mixture of oxygen gas and inert gas at a predetermined mixing ratio into a reactor in which is provided an electrode having thereon a sheet of tungsten as a target and a counter-electrode holding thereon a substrate under a predetermined total pressure condition and a step of applying a predetermined voltage between said electrodes while maintaining the substrate at a predetermined temperature. The present process allows to provide a WO.sub.3 -sputtered film on the substrate. The present invention also provides an electrochromic display device in which the electrochromic film is operated under control not to reach the color saturation condition, thereby preventing the occurrence of separation of the film and thus ensuring a long-term servicelife.

Abstract: Cadmium-tin oxide films are prepared by d-c reactive sputtering of Cd-Sn alloys in Ar-O.sub.2 mixtures. The films obtained have low resistivity of the order of 10.sup.-3 -10.sup.-4 .OMEGA.-cm and high optical transparency depending upon deposition conditions.

Abstract: Cadmium-tin oxide films are prepared by d-c reactive sputtering of Cd-Sn alloys in Ar-O.sub.2 mixtures. The films obtained have low resistivity of the order of 10.sup.-3 -10.sup.-4 .OMEGA.-cm and high optical transparency depending upon deposition conditions.