Abstract: A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.

Abstract: The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.

Abstract: A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body.

Abstract: The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.

Abstract: A gap between a main pole and auxiliary pole composing a thin film magnetic head having a microwave assisted function of the present invention is filled with a nonmagnetic dielectric layer to embed a microwave radiator. The nonmagnetic dielectric layer has an inclined surface at a end on a side of an opposing medium surface by which the microwave radiated from the microwave radiator to be bent toward the main pole, whereby the microwave magnetic field generated from the microwave generator can be gathered immediately below the main pole, further improving the microwave assisted effect.

Abstract: A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.

Abstract: This spin device includes a semiconductor layer 3 formed of single crystalline Si, a first tunnel insulating layer T1 formed on a surface of the semiconductor layer 3, and a first ferromagnetic metal layer 1 formed on the first tunnel insulating layer T1. Area density of dangling bonds in an interface between the semiconductor layer 3 and the first tunnel insulating layer T1 is 3×1014/cm2 or less. In this case, a polarization rate can be greatly improved.

Abstract: A microwave assisted magnetic head of the present invention includes: at least two or more auxiliary coils that are arranged in a periphery of a writing main pole; and microwave current supply means that applies microwave currents to the at least two or more auxiliary coils. The at least two or more auxiliary coils respectively include linear body parts linearly arranged on an ABS side, two of the linear body parts of the at least two or more auxiliary coils are arranged in a substantially orthogonal positional relationship, and the microwave current supply means is configured such that the microwave current supply means changes phase differences of the microwave currents applied respectively to the at least two or more auxiliary coils. Therefore, the microwave current can be easily controlled, and thus, a circularly polarized magnetic field with high magnetization inversion efficiency can be generated as an assistance magnetic field.

Abstract: A microwave assisted magnetic head of the present invention includes: at least two or more auxiliary coils that are arranged in a periphery of a writing main pole; and microwave current supply means that applies microwave currents to the at least two or more auxiliary coils. The at least two or more auxiliary coils respectively include linear body parts linearly arranged on an ABS side, two of the linear body parts of the at least two or more auxiliary coils are arranged in a substantially orthogonal positional relationship, and the microwave current supply means is configured such that the microwave current supply means changes phase differences of the microwave currents applied respectively to the at least two or more auxiliary coils. Therefore, the microwave current can be easily controlled, and thus, a circularly polarized magnetic field with high magnetization inversion efficiency can be generated as an assistance magnetic field.

Abstract: The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.

Abstract: The present invention relates to a perpendicular recording magnetic head. A perpendicular recording element includes a main magnetic pole film for emitting a perpendicular magnetic field and is supported by a slider. The main magnetic pole film includes an electrode film and a plated film, the electrode film is an alloy film of at least one element selected from the platinum group and Ni, and the plated film is a magnetic film grown on the electrode film.

Abstract: A magnetic recording and reproducing apparatus includes a metal housing, a magnetic recording medium having a magnetic recording layer, and a thin-film magnetic head having a write magnetic field production unit and a resonance magnetic field production unit. The apparatus further includes a write signal generation unit for generating the write signal, a microwave signal generation unit for generating the microwave excitation signal, a transmission unit for feeding the microwave excitation signal to the resonance magnetic field production unit and for feeding the write signal to the write magnetic field production unit, and a plurality of metal ribs, arranged in the metal housing, for forming a plurality of cavities. Each of the plurality of cavities having a rectangular horizontal section shape and having dimensions to produce no resonance at a frequency of the microwave excitation signal.

Abstract: A thin-film magnetic head having microwave magnetic exciting function includes a write magnetic field production means for producing, in response to a write signal, a write magnetic field to be applied into a magnetic recording medium, and at least line conductor of a microwave radiator of a plane-structure type, formed independent from the write magnetic field production means, for radiating, by feeding there through a microwave excitation current, a microwave band resonance magnetic field with a frequency equal to or in a range near a ferromagnetic resonance frequency FR of the magnetic recording medium.

Abstract: An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 ?·?m2, an MR element that has a large variation of a resistance is obtained.

Abstract: The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.

Abstract: A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.

Abstract: A gap between a main pole and auxiliary pole composing a thin film magnetic head having a microwave assisted function of the present invention is filled with a nonmagnetic dielectric layer to embed a microwave radiator. The nonmagnetic dielectric layer has an inclined surface at a end on a side of an opposing medium surface by which the microwave radiated from the microwave radiator to be bent toward the main pole, whereby the microwave magnetic field generated from the microwave generator can be gathered immediately below the main pole, further improving the microwave assisted effect.

Abstract: A thin-film magnetic head having microwave magnetic exciting function, includes a write magnetic field production unit for producing, in response to a write signal, a write magnetic field to be applied into a magnetic recording medium, a line conductor of a microwave radiator of a plane-structure type, formed independent from the write magnetic field production means, for radiating, by feeding there through a microwave excitation current, a microwave band resonance magnetic field with a frequency equal to or in a range near a ferromagnetic resonance frequency FR of the magnetic recording medium, and two conductors separated from the line conductor in a direction perpendicular to a track-width direction of the thin-film magnetic head and parallel to an ABS of the thin-film magnetic head. The microwave radiator is an inverted micro strip waveguide having the line conductor and a ground conductor constituted by the magnetic recording medium.

Abstract: An image composing apparatus includes a first accumulator which repeatedly accumulates a moving amount of an imaging surface in one of a horizontal direction and a vertical direction. A first determiner repeatedly determines whether or not a movement of the imaging surface in another of the horizontal direction and the vertical direction satisfies a taking condition, in a period during which an accumulated value of the first accumulator belongs to a predetermined range. A second determiner repeatedly determines whether or not the accumulated value of the first accumulator reaches an upper limit of the predetermined range. A taker takes, for image composing, a scene image produced on the imaging surface corresponding to updating from a negative result to a positive result on a determined result of the first determiner and/or the second determiner. A restarter restarts the first accumulator in association with a taking process of the taker.

Abstract: A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.