Patents by Inventor Kiyoshi Ohsuga
Kiyoshi Ohsuga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9925618Abstract: A laser processing apparatus is provided wherein a laser beam of a wavelength which passes through a wafer having a surface on which a plurality of devices are disposed is irradiated along a schedule division line to separate the adjacent devices from each other to form a modification layer which continuously extends in a given length in the inside of the wafer. A mark portion is displayed in an overlapping relationship with a picked up image obtained by image pickup of a wafer on a display unit. If the mark portion is moved to a desired position of the picked up image displayed on the display unit, then coordinates which correspond to the desired position of the picked up image are stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into a storage unit.Type: GrantFiled: September 1, 2015Date of Patent: March 27, 2018Assignee: Disco CorporationInventors: Tsutomu Maeda, Kiyoshi Ohsuga
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Publication number: 20160074959Abstract: A laser processing apparatus is provided wherein a laser beam of a wavelength which passes through a wafer having a surface on which a plurality of devices are disposed is irradiated along a schedule division line to separate the adjacent devices from each other to form a modification layer which continuously extends in a given length in the inside of the wafer. A mark portion is displayed in an overlapping relationship with a picked up image obtained by image pickup of a wafer on a display unit. If the mark portion is moved to a desired position of the picked up image displayed on the display unit, then coordinates which correspond to the desired position of the picked up image are stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into a storage unit.Type: ApplicationFiled: September 1, 2015Publication date: March 17, 2016Inventors: Tsutomu Maeda, Kiyoshi Ohsuga
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Patent number: 8476553Abstract: A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.Type: GrantFiled: September 1, 2011Date of Patent: July 2, 2013Assignee: Disco CorporationInventors: Satoshi Usuda, Kiyoshi Ohsuga, Masaru Nakamura
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Publication number: 20120061361Abstract: A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region on through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.Type: ApplicationFiled: September 1, 2011Publication date: March 15, 2012Applicant: DISCO CORPORATIONInventors: Satoshi Usuda, Kiyoshi Ohsuga, Masaru Nakamura
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Patent number: 7927974Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.Type: GrantFiled: November 13, 2008Date of Patent: April 19, 2011Assignee: Disco CorporationInventors: Yosuke Watanabe, Kenji Furuta, Kiyoshi Ohsuga
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Publication number: 20090149002Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.Type: ApplicationFiled: November 13, 2008Publication date: June 11, 2009Applicant: DISCO CORPORATIONInventors: Yosuke Watanabe, Kenji Furuta, Kiyoshi Ohsuga
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Patent number: 7483115Abstract: A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of theType: GrantFiled: August 7, 2006Date of Patent: January 27, 2009Assignee: Disco CorporationInventors: Koichi Shigematsu, Satoshi Kobayashi, Kiyoshi Ohsuga
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Publication number: 20070035692Abstract: A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of theType: ApplicationFiled: August 7, 2006Publication date: February 15, 2007Inventors: Koichi Shigematsu, Satoshi Kobayashi, Kiyoshi Ohsuga