Abstract: The coin batch loading device of the present invention is a coin batch loading device capable of separating out coins one by one which were input as a batch and delivering them, including a cylindrical portion having an opening at the top and a side wall and a bottom wall, a rotor which is disposed inside the cylindrical portion and rotates about the center of the cylindrical portion, outer periphery sensors provided inside the cylindrical portion which detect one or more coins on an outer perimeter portion of the rotor, and a control device for controlling the rotation of the rotor, wherein if one or more outer periphery sensors detect one or more coins, the control device is able to set the rotational speed of the rotor to a medium speed which is lower than a high speed.

Abstract: The coin batch loading device of the present invention is a coin batch loading device capable of separating out coins one by one which were input as a batch and delivering them, including a cylindrical portion having an opening at the top and a side wall and a bottom wall, a rotor which is disposed inside the cylindrical portion and rotates about the center of the cylindrical portion, outer periphery sensors provided inside the cylindrical portion which detect one or more coins on an outer perimeter portion of the rotor, and a control device for controlling the rotation of the rotor, wherein if one or more outer periphery sensors detect one or more coins, the control device is able to set the rotational speed of the rotor to a medium speed which is lower than a high speed.

Abstract: The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.

Abstract: Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.

Abstract: The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.

Abstract: A thin film forming method by a plasma discharging treatment under atmospheric pressure with a thin film forming apparatus which has a first discharging space for forming a functional thin film on a substrate, and a second discharge space for post-treating the substrate which formed the thin film. The first discharge space has a roller electrodes pair. The thin film forming method includes, a film forming process at the first discharge space which includes the steps of transporting the substrate by the roller electrodes; supplying discharging gas and thin film forming gas into the first discharging space; and generating a high frequency electric field between the roller electrodes. The post-treatment process includes the steps of introducing the substrate on which the functional film is formed; and supplying a discharging gas and post-treatment gas between the facing electrodes; and, generating a high frequency electric field between the facing electrode and the roller electrode.

Abstract: Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.

Abstract: A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

Abstract: A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency ?2 of the second high frequency electric field is higher than frequency ?1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1?IV>V2 or V1>IV?V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

Abstract: A plasma treatment method for surface treatment of a substrate with an atmospheric pressure plasma treatment apparatus is disclosed. The apparatus has a first electrode and a second electrode opposed to each other, a discharge space between the opposed electrodes, a voltage application means for applying voltage across the discharge space, a gas supply means for supplying a reactive gas and an inert gas to the discharge space. The method is one wherein the reactive gas at the discharge space is excited at atmospheric pressure or at approximately atmospheric pressure by applying voltage through the voltage application means to generate discharge plasma, and a substrate is exposed to the discharge plasma to be subjected to surface treatment, and wherein the reactive gas is not directly in contact with the discharge surface of the first electrode or the second electrode.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

Abstract: An atmospheric pressure plasma treatment apparatus is disclosed which comprises a first electrode and a second electrode opposed to each other, a discharge space between the opposed electrodes, a voltage application means for applying voltage across the discharge space, a gas supply means for supplying a reactive gas and an inert gas to the discharge space, wherein the reactive gas at the discharge space is excited at atmospheric pressure or at approximately atmospheric pressure by applying voltage through the voltage application means to generate discharge plasma, and a substrate is exposed to the discharge plasma to be subjected to surface treatment, and wherein the reactive gas is not directly in contact with the discharge surface of the first electrode or the second electrode.

Abstract: A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.

Abstract: A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.

Abstract: A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.