Patents by Inventor Kiyoshi Ooi

Kiyoshi Ooi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7402900
    Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.
    Type: Grant
    Filed: March 29, 2004
    Date of Patent: July 22, 2008
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Akio Rokugawa
  • Patent number: 7358114
    Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.
    Type: Grant
    Filed: October 24, 2005
    Date of Patent: April 15, 2008
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Akio Rokugawa
  • Patent number: 7282419
    Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.
    Type: Grant
    Filed: April 12, 2005
    Date of Patent: October 16, 2007
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Tomoo Yamasaki, Kiyoshi Ooi, Akio Rokugawa
  • Patent number: 7223652
    Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.
    Type: Grant
    Filed: February 1, 2005
    Date of Patent: May 29, 2007
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Tomoo Yamasaki
  • Patent number: 7161242
    Abstract: A semiconductor device substrate includes a substrate body having a wiring layer. A base is formed by a material that is different from a material of the substrate body. The base supports the substrate body, and has an opening forming portion where a semiconductor element is mounted. A reinforcing member is larger than the opening forming portion, provided in the substrate body at a portion corresponding to the opening forming portion, and reinforces the substrate body at the portion corresponding to the opening forming portion.
    Type: Grant
    Filed: March 15, 2004
    Date of Patent: January 9, 2007
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Tomoo Yamasaki, Akio Rokugawa, Akihito Takano, Kiyoshi Ooi
  • Patent number: 7072168
    Abstract: A capacitor device of the present invention includes a substrate, a float electrode formed on the substrate, a valve metal film formed on the float electrode, a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film, and a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: July 4, 2006
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Yasuyoshi Horikawa, Tomoo Yamasaki, Kiyoshi Ooi
  • Patent number: 7038904
    Abstract: A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: May 2, 2006
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Noriyoshi Shimizu, Tomoo Yamasaki, Yasuyoshi Horikawa
  • Publication number: 20060040424
    Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.
    Type: Application
    Filed: October 24, 2005
    Publication date: February 23, 2006
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Akio Rokugawa
  • Patent number: 6999299
    Abstract: A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.
    Type: Grant
    Filed: August 16, 2004
    Date of Patent: February 14, 2006
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Noriyoshi Shimizu, Tomoo Yamasaki, Kiyoshi Ooi, Akio Rokugawa
  • Patent number: 6998308
    Abstract: A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of baked organic polysilane.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: February 14, 2006
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa
  • Patent number: 6979854
    Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: December 27, 2005
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Tomoo Yamasaki, Kiyoshi Ooi, Akio Rokugawa
  • Publication number: 20050185382
    Abstract: A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of baked organic polysilane.
    Type: Application
    Filed: April 22, 2005
    Publication date: August 25, 2005
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa
  • Publication number: 20050181573
    Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.
    Type: Application
    Filed: April 12, 2005
    Publication date: August 18, 2005
    Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventors: Tomoo Yamasaki, Kiyoshi Ooi, Akio Rokugawa
  • Publication number: 20050130368
    Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.
    Type: Application
    Filed: February 1, 2005
    Publication date: June 16, 2005
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Tomoo Yamasaki
  • Patent number: 6897544
    Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: May 24, 2005
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Tomoo Yamasaki
  • Publication number: 20050088800
    Abstract: A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.
    Type: Application
    Filed: October 18, 2004
    Publication date: April 28, 2005
    Inventors: Kiyoshi Ooi, Noriyoshi Shimizu, Tomoo Yamasaki, Yasuyoshi Horikawa
  • Publication number: 20050056939
    Abstract: A thin-film capacitor comprising a first thin-film electrode, a second thin-film electrode, and a thin dielectric film arranged therebetween and formed of a tantalum oxide layer and an aluminum oxide layer neighboring thereto. A method of producing such a thin-film capacitor is also disclosed.
    Type: Application
    Filed: September 14, 2004
    Publication date: March 17, 2005
    Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventors: Kiyoshi Ooi, Tomoo Yamasaki, Akio Rokugawa
  • Publication number: 20050052822
    Abstract: A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.
    Type: Application
    Filed: August 16, 2004
    Publication date: March 10, 2005
    Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventors: Noriyoshi Shimizu, Tomoo Yamasaki, Kiyoshi Ooi, Akio Rokugawa
  • Publication number: 20050013088
    Abstract: A capacitor device of the present invention includes a substrate, a float electrode formed on the substrate, a valve metal film formed on the float electrode, a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film, and a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.
    Type: Application
    Filed: July 13, 2004
    Publication date: January 20, 2005
    Inventors: Yasuyoshi Horikawa, Tomoo Yamasaki, Kiyoshi Ooi
  • Publication number: 20040203193
    Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.
    Type: Application
    Filed: March 29, 2004
    Publication date: October 14, 2004
    Inventors: Kiyoshi Ooi, Yasuyoshi Horikawa, Akio Rokugawa