Patents by Inventor Kiyoshi Oota
Kiyoshi Oota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070274359Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.Type: ApplicationFiled: July 24, 2007Publication date: November 29, 2007Applicant: SANYO ELECTRIC CO., LTD.Inventors: Kunio Takeuchi, Ryoji Hiroyama, Daijiro Inoue, Shigeyuki Okamoto, Noriaki Matsuoka, Shingo Kameyama, Kiyoshi Oota
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Patent number: 7260130Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.Type: GrantFiled: March 29, 2004Date of Patent: August 21, 2007Assignee: Sanyo Electric Co., Ltd.Inventors: Kunio Takeuchi, Ryoji Hiroyama, Daijiro Inoue, Shigeyuki Okamoto, Noriaki Matsuoka, Shingo Kameyama, Kiyoshi Oota
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Publication number: 20070001269Abstract: A nitride semiconductor device includes a nitride semiconductor layer having a main surface, and an ohmic electrode formed on the main surface of the nitride semiconductor layer The ohmic electrode includes a silicon layer formed to contact with the main surface of the nitride semiconductor layer, and a first metal layer formed on the silicon layer.Type: ApplicationFiled: June 28, 2006Publication date: January 4, 2007Applicant: Sanyo Electric Co., Ltd.Inventors: Takashi Kano, Kiyoshi Oota
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Patent number: 7154123Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.Type: GrantFiled: February 18, 2005Date of Patent: December 26, 2006Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20060078020Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: ApplicationFiled: September 7, 2005Publication date: April 13, 2006Inventors: Hiroaki Izu, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20050199891Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.Type: ApplicationFiled: February 18, 2005Publication date: September 15, 2005Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20050173725Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: February 2, 2005Publication date: August 11, 2005Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 6851972Abstract: A terminal assembly is assembled to a first housing segment of a connector housing. A pair of insertion projections is integrally formed to an internal surface of the first housing segment. One of the insertion projections is fit into a gap between cut ends of terminals in the terminal assembly. The other one of the insertion projections is fit into another gap between cut ends of other terminals in the terminal assembly.Type: GrantFiled: September 13, 2002Date of Patent: February 8, 2005Assignee: Asmo Co., Ltd.Inventors: Makoto Koide, Kiyoshi Oota
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Publication number: 20040252739Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.Type: ApplicationFiled: March 29, 2004Publication date: December 16, 2004Inventors: Kunio Takeuchi, Ryoji Hiroyama, Daijiro Inoue, Shigeyuki Okamoto, Noriaki Matsuoka, Shingo Kameyama, Kiyoshi Oota
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Patent number: 6743702Abstract: A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer.Type: GrantFiled: January 30, 2002Date of Patent: June 1, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Takenori Goto, Yasuhiko Nomura, Tsutomu Yamaguchi, Kiyoshi Oota
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Patent number: 6744075Abstract: A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.Type: GrantFiled: September 17, 2002Date of Patent: June 1, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Tsutomu Yamaguchi, Kiyoshi Oota, Yasuhiko Nomura
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Patent number: 6577006Abstract: An undoped GaN buffer layer, an n-type GaN layer and a p-type GaN layer are successively formed on a sapphire substrate, and a partial region from the p-type GaN layer to the n-type GaN layer is removed, to expose the n-type GaN layer. Ti films having a thickness of 3 to 100 Å and Pt films are successively formed on the p-type GaN layer and on the exposed upper surfaces of the n-type GaN layer. Consequently, a p electrode in ohmic contact with the p-type GaN layer and an n electrode in ohmic contact with the n-type GaN layer are formed without being alloyed by heat treatment.Type: GrantFiled: December 28, 1999Date of Patent: June 10, 2003Assignee: Sanyo Electric Co., Ltd.Inventors: Kiyoshi Oota, Nobuhiko Hayashi
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Publication number: 20030052322Abstract: A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.Type: ApplicationFiled: September 17, 2002Publication date: March 20, 2003Applicant: Sanyo Electric Co., Ltd.Inventors: Tsutomu Yamaguchi, Kiyoshi Oota, Yasuhiko Nomura
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Publication number: 20020146855Abstract: A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer.Type: ApplicationFiled: January 30, 2002Publication date: October 10, 2002Applicant: Sanyo Electric Co., Ltd.Inventors: Takenori Goto, Yasuhiko Nomura, Tsutomu Yamaguchi, Kiyoshi Oota
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Patent number: 5963572Abstract: A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.Type: GrantFiled: December 26, 1996Date of Patent: October 5, 1999Assignee: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Takahiro Uetani, Kiyoshi Oota, Koji Komeda, Masayuki Shono, Akira Ibaraki, Keiichi Yodoshi
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Patent number: D552600Type: GrantFiled: October 23, 2006Date of Patent: October 9, 2007Assignee: Sony CorporationInventor: Kiyoshi Oota
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Patent number: D552601Type: GrantFiled: October 23, 2006Date of Patent: October 9, 2007Assignee: Sony CorporationInventor: Kiyoshi Oota
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Patent number: D552657Type: GrantFiled: October 30, 2006Date of Patent: October 9, 2007Assignee: Sony CorporationInventor: Kiyoshi Oota
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Patent number: D556163Type: GrantFiled: June 6, 2006Date of Patent: November 27, 2007Assignee: Sony CorporationInventor: Kiyoshi Oota
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Patent number: D559809Type: GrantFiled: June 6, 2006Date of Patent: January 15, 2008Assignee: Sony CorporationInventor: Kiyoshi Oota