Abstract: Onto a surface of an AlxGayIn1-x-yAszP1-z (0?x, y, z?1) layer including GaAs alone or an InP substrate, an electron beam controlled to an arbitrary electron beam diameter and current density is irradiated so as to selectively substitute or generate Ga2O3 for a natural oxide layer formed on the AlxGayIn1-x-yAszP1-z, layer surface, then the AlxGayIn1-x-yAszP1-z layer surface is dry-etched by a bromide in single atomic layer units, whereby the natural oxide layer other than the part substituted by the Ga2O3 and AlxGayIn1-x-yAszP1-z substrate are removed.

Abstract: Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0?x<1, 0?y and z?1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.

Abstract: Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0?x<1, 0?y and z?1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.

Abstract: A semiconductor integrated circuit device includes: an active device, such as a bipolar transistor and a resistor formed of a first silicon layer formed on a thick insulating film on the semiconductor substrate. A metal silicide film is formed on the surface of said first silicon layer for connection between the first silicon layer and an interconnection layer. The interconnection layer has contact with a first and a second part of the metal silicide film formed on a opposited sides of an isulating film on first silicon layer. The part of the first silicon layer under the insulation film and between the first and second parts of the metal silicide film forms the resistor.