Abstract: A source-gas supply apparatus for supplying a source gas into a CVD reactor includes: a reservoir for storing a liquid material; a gas flow path connected the reservoir and the CVD reactor; a sonic nozzle disposed in the gas flow path, through which the source gas is introduced into the CVD reactor; a pressure sensor disposed in the gas flow path upstream of the sonic nozzle; a flow control valve disposed in the gas flow path upstream of the pressure sensor; and a flow control circuit which receives a signal from the pressure sensor and outputs a signal to the flow control valve to adjust opening of the flow control valve as a function of the signal from the pressure sensor.

Abstract: A method for forming integrated dielectric layers using plasma energy includes (i) depositing a first dielectric layer on a substrate using a first reaction gas comprised of a source gas at a first source gas flow rate and an inert gas at a first inert gas flow rate, wherein the first inert gas flow rate is no more than 40% of the first source gas flow rate, and (ii) continuously depositing a second dielectric layer on top of the first dielectric layer using a second reaction gas comprised of a source gas at a second source gas flow rate and an inert gas at a second inert gas flow rate, wherein the second inert gas flow rate is 40% or higher of the second source gas flow rate.

Abstract: A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

Abstract: A base plate of a stainless-steel body material formed by pressing is polished and cleared of burrs by means of an abrasive material that consists mainly of Fe2O3 in a polishing process. The polished base plate is heated to a heat treatment temperature for solid solution in a reducing atmosphere in a heat treatment process. In this heat treatment process, an oxide in the constituents of minute fragments of the abrasive material in the surface of the body material of the base plate is reduced to leave iron, which is dispersed into the body material.

Abstract: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Abstract: A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Abstract: A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.

Abstract: A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

Abstract: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes: introducing a raw material gas containing silicon, carbon, and hydrogen, an inert gas, and optionally an hydrogen source gas, into a reaction chamber at a predetermined mixing formulation of the raw material gas to the inert gas; applying radio-frequency power at the mixing formulation, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and continuously applying radio-frequency power at a mixing formulation reducing the raw material gas and the hydrogen source gas if any, thereby curing the silicon carbide film to give a dielectric constant and a leakage current lower than those of the curable silicon carbide film.

Abstract: A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Abstract: A method for forming integrated dielectric layers using plasma energy includes (i) depositing a first dielectric layer on a substrate using a first reaction gas comprised of a source gas at a first source gas flow rate and an inert gas at a first inert gas flow rate, wherein the first inert gas flow rate is no more than 40% of the first source gas flow rate, and (ii) continuously depositing a second dielectric layer on top of the first dielectric layer using a second reaction gas comprised of a source gas at a second source gas flow rate and an inert gas at a second inert gas flow rate, wherein the second inert gas flow rate is 40% or higher of the second source gas flow rate.

Abstract: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.

Abstract: A system for mounting a hard disk enclosure (HDE), includes a casing pivotably mounted to minimize at least one of settle-out dynamics, external rotational vibration, and emitted vibration, the casing allowing the HDE to rotate substantially freely, wherein the center of gravity of the HDE is substantially the same as a pivot point of the casing. Further, a computer chassis includes a housing, at least one disk drive assembly for being housed by the housing, and a plurality of theta-mounts integrally built within the housing.

Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.

Abstract: A system for mounting a hard disk enclosure (HDE), includes a casing pivotably mounted to minimize at least one of settle-out dynamics, external rotational vibration, and emitted vibration, the casing allowing the HDE to rotate substantially freely, wherein the center of gravity of the HDE is substantially the same as a pivot point of the casing. Further, a computer chassis includes a housing, at least one disk drive assembly for being housed by the housing, and a plurality of theta-mounts integrally built within the housing.

Abstract: In order to provide a suspension, a head suspension assembly, and a disk drive apparatus that can contribute to an increase of record and playback reliability, holes 3c in ribs 3b of the head suspension assembly 3 are provided. This design decreases the displacement of a head slider 2 that is caused by Karman vortex streets occurring near the ribs 3b in company with the rotation of the magnetic disk 1.

Abstract: To provide a piezoelectric sensor that never sacrifices work properties such as when a lead wire is to be soldered to one of a pair of electrodes of a piezoelectric sensor, and the other electrode is to be bonded and fixed to a predetermined member with an adhesive, and to bond the ground electrode of the piezoelectric sensor to the conductive portion of the object member with an adhesive so as to be fixed and connected electrically, thereby preventing a short-circuit that might occur between the two electrodes due to extruded and stuck adhesive, and to provide an easier method for testing whether or not the ground electrode is connected electrically to the conductive portion of the object member. A piezoelectric sensor has two electrodes that are formed with different materials appropriate for soldering and bonding by an adhesive. The ground electrode of the piezoelectric sensor is bonded to the object member with a non-conductive adhesive so as to be connected electrically.

Abstract: A motor having reduced deformation due to a temperature change. The motor is an outer ring type motor having a bearing cartridge, which integrates the shaft, ball bearings and sleeve. The outer periphery of the sleeve is attached to the inner periphery of the hub at a bonding region positioned axially between the ball bearing holding portions. The bonding portion includes a stress reducing region. The diameter of the hub within the stress reducing region is not uniform in order to reduce the stress generated between the outer periphery of the sleeve and the inner periphery of the hub due to thermal expansion.

Abstract: In order to handle platter flutter in a hard disk operated at high speed (e.g. 10,000 RPM) and maintain tracking of read/write head, peak filters are added to a head tracking servo feedback loop. In some embodiments, several lag-lead type peak filters centered at a plurality of flutter mode frequencies are provided to process a Position Error Signal (PES) read from the read/write head. The several filter are preferably arranged in series (i.e. to operate on the PES sequentially), alternatively the filters can be arranged in parallel. Phase lags and leads caused by the several filters partially cancel at frequencies intermediate center frequencies of the several filters. According to another embodiment two or more, preferably three narrow band filters are used to cover the spectrum of each flutter mode. In a configuration mode, a spectrum of the flutter modes can be obtained and used to set the center frequencies, and bandwidths of filters used to filter out the flutter modes.