Patents by Inventor Kiyoshi Shirahata

Kiyoshi Shirahata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5884548
    Abstract: A brake booster includes a housing, a partition adapted to divide the interior of the housing into two chambers, and two diaphragms adapted to divide the two chambers into constant and variable pressure chambers. A control valve includes a valve body carried by the diaphragms, and a plunger slidably received in the valve body. The control valve is operatively connected to the variable pressure chambers to develop a pressure differential across the diaphragms to cause the diaphragms to move in response to actuation of an input rod. A reaction disk is disposed between an output rod and the valve body to transmit the reaction of movement of the output rod to the input rod. An adjusting mechanism is disposed between the plunger and the reaction disk and compressible so as to develop a greater degree of pressure differential when a force applied by the input rod exceeds a predetermined level.
    Type: Grant
    Filed: April 1, 1997
    Date of Patent: March 23, 1999
    Assignee: Tokico Ltd.
    Inventors: Hiromi Ando, Kiyoshi Shirahata, Mitsuhiro Endo, Atsuya Koshu
  • Patent number: 5873296
    Abstract: A booster apparatus of a vacuum type for a brake device has a housing including therein a chamber, a diaphragm for dividing the chamber of the housing into a constant pressure chamber and a variable pressure chamber, an input shaft including a distal end, an output shaft including a proximal end, a plunger which is engageable with the distal end of the input shaft for transmitting force from the input shaft to the output shaft, a reaction disk disposed between the plunger and the proximal end of the output shaft for transmitting reaction from the output shaft to the plunger, and a valve body mounted on the diaphragm. The valve body includes a hole for slidably receiving the plunger, a recess for fixedly receiving the reaction disk and the proximal end of the output shaft which recess is larger than the plunger hole in inner diameter, and an intermediate hole portion disposed between the plunger hole and the recess.
    Type: Grant
    Filed: May 27, 1997
    Date of Patent: February 23, 1999
    Assignee: Tokico Ltd.
    Inventors: Kiyoshi Shirahata, Mitsuhiro Endo
  • Patent number: 5553530
    Abstract: A plunger moved with an input shaft is movably fitted in an axial bore of a valve body made of resin, and a valve mechanism selectively establishes and cuts off communication in a negative pressure passage and an atmosphere passage formed in the valve body according to the movement of the plunger. Also, a pair of radial holes formed to have a circular cross section are provided in the valve body by drilling work, and a plate type stop key formed in a fork shape having two claw branches is mounted by loosely inserting the branches in the radial holes. The stop key limits a movement range of the plunger. Also, a guide portion is formed on an outer circumference of the valve body to guide side surfaces of the stop key. The movement of the stop key is restricted by the guide portion and a step formed in the axial bore of the valve body. Therefore, a smooth operation of the pneumatic booster can be guaranteed.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: September 10, 1996
    Assignee: Tokico Ltd.
    Inventors: Mitsuhiro Endo, Kiyoshi Shirahata, Hiromi Ando
  • Patent number: 4004953
    Abstract: This invention relates to a method for growing semi-insulating III-V compound semiconductor crystals on a substrate by means of an epitaxially crystallizing process in the liquid state, which comprises the steps of:A. placing a saturated solution of a III-V compound in a reaction tube,B. carrying out a heating of the solution in the atmosphere of H.sub.2 gas, andC. growing a crystal of the III-V compound on the substrate in the liquid phase at a temperature below the melting point of the III-V compound while keeping the vapor pressure of the V Group element under a predetermined value in the reaction tube.
    Type: Grant
    Filed: September 23, 1975
    Date of Patent: January 25, 1977
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mutsuyuki Otsubo, Hidejiro Miki, Kiyoshi Shirahata