Patents by Inventor Kiyoshi Thukuda

Kiyoshi Thukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dielectric isolated substrate and process for producing the same
    Patent number: 5233216
    Abstract: A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.
    Type: Grant
    Filed: October 19, 1992
    Date of Patent: August 3, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Yohsuke Inoue, Michio Ohue, Saburoo Ogawa, Kiyoshi Thukuda, Takeshi Tanaka, Yasuhiro Mochizuki