Abstract: An electrochemical device according to the present invention has an outer package including a metal film; a battery element enclosed in the outer package; resin layers provided at least inside a sealing region of the outer package; and a lead extending from the battery element through between the resin layers in the sealing region of the outer package to the outside of the outer package, and a shape of the lead in the sealing region includes front and back surfaces both consisting of curved surfaces. In the sealing region, a maximum thickness Z1 of the lead near a lateral center position of the lead and a thickness Z11 at a lateral end position of the lead satisfy the relation of Z11<Z1. This electrochemical device comes to have high quality.

Abstract: A surface-covered cermet member capable of improving an oxidation resistance while maintaining excellent performance of a titanium series sintered compact is provided. The invention is directed to a surface-covered cermet member in which an oxidation resistant film 12 is formed on a cermet base material 11 made of a sintered compact containing at least one or more titanium compounds selected from titanium carbide, titanium nitride, and titanium carbonitride as a major component of a hard phase. In the surface-covered cermet member of the present invention, the oxidation resistant film 12 is constituted by a complex oxide containing titanium.

Abstract: An electrochemical device according to the present invention has an outer package including a metal film; a battery element enclosed in the outer package; resin layers provided at least inside a sealing region of the outer package; and a lead extending from the battery element through between the resin layers in the sealing region of the outer package to the outside of the outer package, and a shape of the lead in the sealing region includes front and back surfaces both consisting of curved surfaces. In the sealing region, a maximum thickness Z1 of the lead near a lateral center position of the lead and a thickness Z11 at a lateral end position of the lead satisfy the relation of Z11<Z1. This electrochemical device comes to have high quality.

Abstract: It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.

Abstract: A shielded electric wire 1A is composed of a plurality of covered electric wires 10 of which core wires 2 are covered by covers having different colors; a braided shield 4 attached to an outer region of the covered electric wires 10; and an insulating sheath 5 covering an outer circumference of the braided shield 4. Because the covered electric wires 10 have covers 3 having different colors, the covered electric wires 10 can be identified from each other. Further, a mark 6A for identifying the electric wire is formed on a part of the outer surface of the sheath 5. A color identifying a destination of each covered electric wire 10 is selected properly as the color of the mark 6A. Further, a combination of the colors of the covers 3 of the covered electric wires 10 and the color of the mark 6A can indicate a product type of the shielded electric wire 1A.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.

Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and a nickel-based alloy.

Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.

Abstract: The present invention relates to a copper-containing formulation for plant disease-control which comprises divalent copper and polyphosphate residues, wherein the amount of the polyphosphate residues per one chemical equivalent of the divalent copper is higher than one chemical equivalent. The copper-containing formulation of the present invention shows an excellent disease-control effect without causing any chemical injury of the plant.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.

Abstract: A method of producing a magnetic garnet single crystal film formation substrate 2 for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. First, a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth is formed. Next, a buffer layer 11 composed of a garnet-based single crystal thin film formed at least on a crystal growing surface of said base substrate 10 and being stable with the flux is formed. When forming the buffer layer 11 on the base substrate 10, it is formed by a thin film formation method, such as sputtering, without heating the substrate 10 in a positive manner.

Abstract: A magnetic garnet single crystal film formation substrate 2 for growing a thick magnetic garnet single crystal film, wherein crystal defects, warps, cracks and flaking, etc. are not caused, by liquid phase epitaxial growth is provided. The substrate 2 comprises a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth; a buffer layer 11a composed of a garnet-based single crystal thin film formed on a crystal growing surface 10a of said base substrate 10 and being stable with said flux; and a protective layer 11b formed at least on side surfaces 10b of said base substrate 10 crossing with said crystal growing surface of said base substrate 10 and being stable with said flux. By using the substrate, a high quality magnetic garnet single crystal film can be produced.

Abstract: The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18?x?0.45, 0.96?y?1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.

Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.

Abstract: An optical disk of the present invention includes a substrate and a recording layer disposed above the substrate, and reproduces an information signal by a DWDD system, using light incident from the substrate side. The optical disk further includes a first dielectric layer disposed between the substrate and the recording layer and a second dielectric layer disposed on the recording layer opposite to the substrate, wherein the recording layer is initialized with light having a wavelength ? incident from the second dielectric layer side, and the thickness of the second dielectric layer is in a range of ?/(12×n) to ?/(2×n) (where n is a refractive index of the second dielectric layer).

Abstract: The object of the present invention is to provide a method of producing antisense oligonucleotide, in which the possibility of forming a substantially complementary double-stranded chain between each region of a nucleotide sequence in mRNA and a region other than said region is expressed as a numerical value, and oligonucleotide substantially complementary to a region with a smaller numerical value is prepared as antisense oligonucleotide. The resulting antisense oligonucleotide can be used effectively in the antisense oligonucleotide method.

Abstract: The present invention relates to a copper-containing formulation for plant disease-control which comprises divalent copper and polyphosphate residues, wherein the amount of the polyphosphate residues per one chemical equivalent of the divalent copper is higher than one chemical equivalent. The copper-containing formulation of the present invention shows an excellent disease-control effect without causing any chemical injury of the plant.

Abstract: A magnetic garnet single crystal film formation substrate for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. This substrate comprises a base substrate composed of a garnet-based single crystal which is unstable with a flux used for the liquid phase epitaxial growth and a buffer layer composed of a garnet-based single crystal thin film formed on the base substrate and being stable with said flux. A high-quality magnetic garnet single crystal film can be produced by using the substrate. The magnetic garnet single crystal film is used as an optical element, such as a Faraday element, used in an optical isolator, optical circulator and magneto-optical sensor, etc.