Abstract: A novel memory device is provided. The memory device includes a plurality of first wirings extending in a first direction, a plurality of memory element groups, and an oxide layer extending along a side surface of the first wiring. Each of the memory element groups includes a plurality of memory elements. Each of the memory elements includes a first transistor and a capacitor. A gate electrode of the first transistor is electrically connected to the first wiring. The oxide layer includes a region in contact with a semiconductor layer of the first transistor. A second transistor is provided between the adjacent memory element groups. A high power supply potential is supplied to one or both of a source electrode and a drain electrode of the second transistor.

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Abstract: A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

Abstract: A novel semiconductor device formed with single-polarity circuits using OS transistors is provided. Thus, connection between different layers in a memory circuit is unnecessary. This can reduce the number of connection portions and improve the flexibility of circuit layout and the reliability of the OS transistors. In particular, many memory cells are provided; thus, the memory cells are formed with single-polarity circuits, whereby the number of connection portions can be significantly reduced. Further, by providing a driver circuit in the same layer as the cell array, many wirings for connecting the driver circuit and the cell array can be prevented from being provided between layers, and the number of connection portions can be further reduced. An interposer provided with a plurality of integrated circuits can function as one electronic component.

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Abstract: An ammonia decomposition catalyst contains a carrier containing a composite oxide of cerium (Ce) and praseodymium (Pr), and ruthenium (Ru), and the content of the composite oxide is 70 mass % or more with respect to the entire catalyst, and the molar ratio between Ce and Pr in the composite oxide is Ce:Pr=99:1 to 10:90.

Abstract: A bipolar plate includes a substrate and a coating film that is formed at least on a part of a surface of the substrate. The coating film includes a phosphide having a composition represented by M2?xTixP, where M is any one or more elements selected from the group consisting of Ni, Co, Fe, Mn and Cr, and 0.1?x?1.9. The coating film preferably includes two kinds or more of the metal elements M, and preferably has a thickness ranging from 0.05 ?m or greater to 100 ?m or less.

Abstract: The electrolysis system of the present invention has a water electrolysis unit equipped with a water electrolysis cell using a solid polymer electrolyte membrane as its diaphragm, a DC power source for supplying the water electrolysis cell with a DC current, and a mitigation unit for mitigating, when a counter electromotive force or abrupt potential fluctuation occurs in the water electrolysis cell, the counter electromotive force or the potential fluctuation. The mitigation unit is preferably a coil+diode (A) connected in parallel between the DC power source and the water electrolysis cell or a diode (B) connected between the DC power source and the water electrolysis cell. The electrolysis system is preferably equipped further with a lowering rate controller for controlling the lowering rate of a current supplied from the DC power source to the water electrolysis cell.

Abstract: A bipolar plate includes a substrate and a coating film that is formed at least on a part of a surface of the substrate. The coating film includes a phosphide having a composition represented by M2-xTixP, where M is any one or more elements selected from the group consisting of Ni, Co, Fe, Mn and Cr, and 0.1?x?1.9. The coating film preferably includes two kinds or more of the metal elements M, and preferably has a thickness ranging from 0.05 ?m or greater to 100 ?m or less.

Abstract: The electrolysis system of the present invention has a water electrolysis unit equipped with a water electrolysis cell using a solid polymer electrolyte membrane as its diaphragm, a DC power source for supplying the water electrolysis cell with a DC current, and a mitigation unit for mitigating, when a counter electromotive force or abrupt potential fluctuation occurs in the water electrolysis cell, the counter electromotive force or the potential fluctuation. The mitigation unit is preferably a coil+diode (A) connected in parallel between the DC power source and the water electrolysis cell or a diode (B) connected between the DC power source and the water electrolysis cell. The electrolysis system is preferably equipped further with a lowering rate controller for controlling the lowering rate of a current supplied from the DC power source to the water electrolysis cell.

Abstract: A hydrogen production catalyst used for generating hydrogen by splitting water, the catalyst comprising a composite metal oxide of cerium oxide and praseodymium oxide.

Abstract: An exhaust gas purification catalyst includes an alumina support, a silica layer, and active metal particles. The silica layer is formed on a surface of the alumina support. The active metal particles are formed of platinum and palladium, the platinum and the palladium being supported on the silica layer. A ratio of fine particles having a particle size of 2.0 nm or less to all the active metal particles is 50% or higher in terms of the number of particles, the fine particles being included in the active metal particles. A ratio of fine alloy particles having a palladium content ratio of 10 at % to 90 at % to all the fine particles is 50% or higher in terms of the number of particles, the fine alloy particles being included in the fine particles.

Abstract: An exhaust gas purification catalyst includes: a support formed of alumina and yttria; and platinum and palladium that are supported on the support. An yttria content in the support is 2 mass % to 15 mass %. A content ratio of the platinum to the palladium is in a range of 1 to 10 by mass ratio. At least a portion of the platinum and at least a portion of the palladium constitute a solid solution. A diffraction peak of a (311) plane of a crystal including the platinum, the palladium and the solid solution is present at 81.5° or higher in a range of 81.2° to 82.1°, the diffraction peak being identified by an X-ray diffraction method using CuK? rays.

Abstract: An exhaust gas purification catalyst includes an alumina support, a silica layer, and active metal particles. The silica layer is formed on a surface of the alumina support. The active metal particles are formed of platinum and palladium, the platinum and the palladium being supported on the silica layer. A ratio of fine particles having a particle size of 2.0 nm or less to all the active metal particles is 50% or higher in terms of the number of particles, the fine particles being included in the active metal particles. A ratio of fine alloy particles having a palladium content ratio of 10 at % to 90 at % to all the fine particles is 50% or higher in terms of the number of particles, the fine alloy particles being included in the fine particles.

Abstract: A hydrogen generator into which a mixed gas is run and out of which a reformed gas including hydrogen is discharged, which can reliably control the hydrogen concentration in the reformed gas to a desired concentration. The hydrogen generator is provided with an upstream side oxidation unit and a downstream side decomposition unit, burns part of the compound in the mixed gas in the oxidation unit using the oxygen in the mixed gas so as to generate heat of combustion, and uses the heat of combustion to break down another part of the compound in the mixed gas in the decomposition unit so as to generate hydrogen. The hydrogen generator is provided with a first temperature sensor controller.

Abstract: An exhaust gas purification catalyst includes: a support containing alumina as a major component; and an active species fine particle containing silver sulfate as a major component and having an average crystallite size of 3 nm to less than 100 nm, in which the active species fine particle is supported on a surface of the support.

Abstract: The internal combustion engine has an upstream side NOx selective reduction catalyst and a downstream side NOx selective reduction catalyst which are arranged in an engine exhaust passage. The upstream side NOx selective reduction catalyst has a region where the NOx removal rate becomes substantially constant when the ratio of concentration of ammonia to NOx of the inflowing exhaust rises. The internal combustion engine has an operating state in that region where the ratio of concentration of ammonia to NOx is maintained. The downstream side NOx selective reduction catalyst has an ammonia oxidation ability which is larger than the upstream side NOx selective reduction catalyst.

Abstract: A hydrogen production catalyst used for generating hydrogen by splitting water, the catalyst comprising a composite metal oxide of cerium oxide and praseodymium oxide.

Abstract: A composite material includes an aggregate which contains a first metal particle constituting a core and second metal oxide particulates surrounding the first metal particle and having an average primary particle diameter ranging from 1 to 100 nm.

Abstract: A process for purifying exhaust gases includes the steps of collecting PMs, forcibly exhausting PMs, and purifying PMs. In the step of purifying PMs, PMs in exhaust gases are collected with a filter. In the step of forcibly exhausting PMs, PMs, which are collected on the filter, are exhausted by blowing a pressurized gas onto the filter, thereby forming PMs-containing gases. In the step of purifying PMs, PMs, which are contained in the PMs-containing gases, are purified by contacting an oxidizing agent with the PMs-containing gases, thereby removing the PMs from the PMs-containing gases by means of oxidation.