Abstract: A display device includes a first fiber having a silicon layer or an oxide layer, on which an active element is formed on the surface of the fiber and a second fiber forming a combined one-dimensional substrate together with the first fiber by being combined with the first fiber and having light emitting layers formed on a plurality of domains of the device. The first fiber and the second fiber are respectively drawn out from take-up jigs, are cut in necessary lengths and separated into plural fibers, and these plural first or second fibers are mounted in parallel with each other on a fixing jig. In this state, at least one-side elements of active elements and passive elements are formed on the first or second fibers.

Abstract: An organic transistor having a source electrode, a drain electrode, a gate electrode, and an organic semiconductor layer, wherein the organic semiconductor layer comprises a compound represented by the following general formula [1] or [3]: General Formula [1] wherein A and B independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted aryl group. General Formula [3] wherein R1 to R10 are independently a hydrogen atom, a halogen atom, an alkyl group which has 4 or less carbon atoms and may be substituted with a halogen atom, an alkoxyl group which has 4 or less carbon atoms and may be substituted with a halogen atom, an amino group which has 4 or less carbon atoms and may be substituted with a halogen atom, a nitro group, or a cyano group, and the compound contains at least one halogen atom.

Abstract: The invention provides a display device using a one-dimensional substrate making layout of a substrate unnecessary and realizing a further low cost. A display device of the invention comprises a first fiber having a silicon layer or an oxide layer, on which an active element is formed, formed on the surface of it and a second fiber forming a combined one-dimensional substrate together with the first fiber by being combined with the first fiber and having light emitting layers formed on a plurality of domains of it, wherein the first fiber and the second fiber are respectively drawn out from take-up jigs, are cut in necessary lengths and separated into plural fibers, and these plural first or second fibers are mounted in parallel with each other on a fixing jig and in this state, at least one-side elements of active elements and passive elements are formed on the first or second fibers.

Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.

Abstract: An organic transistor having a source electrode, a drain electrode, a gate electrode, and an organic semiconductor layer, wherein the organic semiconductor layer comprises a compound represented by the following general formula [1] or [3]: General Formula [1] wherein A and B independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted aryl group. General Formula [3] wherein R1 to R10 are independently a hydrogen atom, a halogen atom, an alkyl group which has 4 or less carbon atoms and may be substituted with a halogen atom, an alkoxyl group which has 4 or less carbon atoms and may be substituted with a halogen atom, an amino group which has 4 or less carbon atoms and may be substituted with a halogen atom, a nitro group, or a cyano group, and the compound contains at least one halogen atom.

Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.

Abstract: The invention provides a display device using a one-dimensional substrate making layout of a substrate unnecessary and realizing a further low cost. A display device of the invention comprises a first fiber 80 having a silicon layer or an oxide layer, on which an active element is formed, formed on the surface of it and a second fiber 81 forming a combined one-dimensional substrate together with the first fiber 80 by being combined with the first fiber 80 and having light emitting layers formed on a plurality of domains of it, wherein the first fiber 80 and the second fiber 81 are respectively drawn out from take-up jigs, are cut in necessary lengths and separated into plural fibers, and these plural first or second fibers 80 or 81 are mounted in parallel with each other on a fixing jig and in this state, at least one-side elements of active elements and passive elements are formed on the first or second fibers 80 or 81.

Abstract: Carbon nanotubes are isolated from a mixture containing the carbon nanotubes and graphite particles by a process including the steps of:finely pulverizing the mixture;dispersing the pulverized product in a liquid medium;centrifuging the resulting dispersion to obtain a supernatant containing carbon nanotubes and graphite particles having a particle size of 0.3 .mu.m or less;separating the supernatant into a solid phase and a liquid phase; andcalcining the solid phase in an oxygen-containing atmosphere at a temperature sufficient to burn the graphite particles and to leave the nanotubes.