Abstract: The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH4, B2H6 and PH3), the apparatus can be installed and operated at lower costs. In an application of the film producing method according to the present invention, an objective substance can be selectively purified from a target containing a plurality of substances.

Abstract: In a plasma source of a plasma processing apparatus, the plasma source being of the dielectric barrier discharge mode of an surface discharge type, incorporating electrodes in pairs (an antenna, and a ground) areally formed inside a dielectric, a subject under-processing is kept substantially in contact with the plasma source, thereby causing a plasma to be generated on a plane on a side of the subject under-processing, opposite from a plane on which the plasma source is provided.

Abstract: The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH4, B2H6 and PH3), the apparatus can be installed and operated at lower costs. In an application of the film producing method according to the present invention, an objective substance can be selectively purified from a target containing a plurality of substances.

Abstract: An accurate dry etching technique is described that employs a flow of neutral radicals and a light beam. A dry etching apparatus 50 employs a neutral radical flow source 20 and a light beam 40 to irradiate a flow of neutral radicals 32, so that the velocity component of the neutral radicals parallel to the surface of an object to be etched 12 is reduced, and etches anisotropically the object to be etched, while the object 12 is exposed to the radical flow 32 whose parallel velocity component is decreased. The invention reduces the problem of etching parallel to the substrate while etching perpendicular to the substrate to improve anisotropic dry etching without any adverse or damage producing effect to dielectric or semiconductor layers due to ions.

Abstract: An accurate dry etching technique is described that employs a flow of neutral radicals and a light beam. A dry etching apparatus 50 employs a neutral radical flow source 20 and a light beam 40 to irradiate a flow of neutral radicals 32, so that the velocity component of the neutral radicals parallel to the surface of an object to be etched 12 is reduced, and etches anisotropically the object to be etched, while the object 12 is exposed to the radical flow 32 whose parallel velocity component is decreased. The invention reduces the problem of etching parallel to the substrate while etching perpendicular to the substrate to improve anisotropic dry etching without any adverse or damage producing effect to dielectric or semiconductor layers due to ions.