Abstract: A precursor wire for compound superconducting wire includes: a compound superconducting precursor member configured by compound superconducting precursor filaments, and a first matrix precursor embedding the compound superconducting precursor filaments and including a first stabilizing material; a reinforcing member arranged at the outer circumferential side of the compound superconducting precursor member, and configured by reinforcing filaments, and a second matrix embedding the reinforcing filaments and including a second stabilizing material; and a cylindrical stabilizing member arranged to at least one of the inner circumferential side or outer circumferential side of the reinforcing member, and consisting of a third stabilizing material, in which an aspect ratio Ab1 (Wb1/Tb1) of a width dimension Wb1 relative to a thickness dimension Tb1 of the compound superconducting precursor member in a cross section perpendicular to a longitudinal direction of the compound superconducting precursor member is 1.

Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that includes (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1} <3 4 6> is within 30° is 60% or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1}<3 4 6> is within 30° is 60 % or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: A copper alloy sheet material, having a composition containing any one or both of Ni and Co in an amount of 0.5 to 5.0 mass % in total, and Si in an amount of 0.3 to 1.5 mass %, with the balance of copper and unavoidable impurities, wherein an area ratio of cube orientation {0 0 1} <1 0 0> is 5 to 50%, according to a crystal orientation analysis in EBSD measurement.

Abstract: A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.

Abstract: A copper alloy material, containing Ni 1.8 to 5.0 mass % and Si 0.3 to 1.7 mass %, at a ratio of contents of Ni and Si, Ni/Si, of 3.0 to 6.0, and having a content of S of less than 0.005 mass %, with the balance of being Cu and inevitable impurities, wherein the copper alloy material satisfies formulae (1) to (4): 130×C+300?TS?130×C+650??(1) 0.001?d?0.020??(2) W?150??(3) 10?L?800??(4) wherein TS represents a tensile strength (MPa) of the copper alloy material in a direction parallel to rolling; C represents the content (mass %) of Ni in the copper alloy material; d represents an average grain diameter (mm) of the copper alloy material; W represents a width (nm) of a precipitate free zone; and L represents a particle diameter (nm) of a compound on a grain boundary.

Abstract: A copper alloy material for electric/electronic parts, containing: Sn 3.0 to 13.0 mass %, any one or both of Fe and Ni 0.01 to 2.0 mass % in total, and P 0.01 to 1.0 mass %, with the balance being Cu and unavoidable impurities, wherein an average diameter of grains is 1.0 to 5.0 ?m, wherein a compound X having an average diameter of 30 nm or more and 300 nm or less is dispersed in density 104 to 108 per mm2, wherein a compound Y having an average diameter of more than 0.3 ?m and not more than 5.0 ?m is dispersed in density 102 to 106 per mm2; and wherein a tensile strength is 600 MPa or more.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1}<3 4 6> is within 30° is 60% or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: A method of producing a copper alloy containing: Ni and/or Si and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, the copper alloy having a precipitate X composed of Ni and Si, and a precipitate Y composed of Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, in which a grain diameter of the precipitate Y is 0.01 to 2 ?m.

Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that comprises (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: A copper alloy sheet material, having a composition containing any one or both of Ni and Co in an amount of 0.5 to 5.0 mass % in total, and Si in an amount of 0.3 to 1.5 mass %, with the balance of copper and unavoidable impurities, wherein an area ratio of cube orientation {0 0 1} <1 0 0> is 5 to 50%, according to a crystal orientation analysis in EBSD measurement.

Abstract: A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %.

Abstract: A copper alloy material for an electrical/electronic equipment, containing Ni 3.3 to 5.0 mass %, having a content of Si within the range of 2.8 to 3.8 in terms of a mass ratio of Ni and Si (Ni/Si), and containing Mg 0.01 to 0.2 mass %, Sn 0.05 to 1.5 mass %, and Zn 0.2 to 1.5 mass %, with the balance of Cu and inevitable impurities, wherein when a test piece with thickness t of 0.20 mm and width w of 2.0 mm is subjected to 90° W-bending with bending radius R of 0.1 mm, no cracks occur on the test piece; and, an electrical/electronic part obtained by working the same.

Abstract: A copper alloy material for an electrical/electronic equipment, containing Ni not less than 2.0 mass % and less than 3.3 mass %, having a content of Si within the range of 2.8 to 3.8 in terms of a mass ratio of Ni and Si (Ni/Si), and containing Mg 0.01 to 0.2 mass %, Sn 0.05 to 1.5 mass %, and Zn 0.2 to 1.5 mass %, with the balance of Cu and inevitable impurities, wherein when a test piece with thickness t of 0.20 mm and width w of 2.0 mm is subjected to 180°-bending with bending radius R (mm), a value of the minimum bending radius R causing no cracks is 0 mm to 0.1 mm; and, an electrical/electronic part obtained by working the same.

Abstract: A copper alloy material for electric/electronic components according to the present invention is characterized in that a average grain size of 1 to 50 ?m that is designated by ((a+b)/2) in which a thickness of a grain is defined to be (a) and a width thereof is defined to be (b) which is on a cross section that is vertical to a rolling direction, an aspect ratio (a/b) thereof is between 0.5 and 1.0, an aspect ratio (a/b) of a grain before performing a bend working and an aspect ratio (a?/b?) of which a grain is effected by a tensile stress after performing a bend working of 90 degrees satisfy the following (Formula 1) of: 2?(a+b)/(a?/b?)?15??(Formula 1), and the copper alloy material has a bending workability to be excellent.

Abstract: A copper alloy material, containing Ni 1.8 to 5.0 mass % and Si 0.3 to 1.7 mass %, at a ratio of contents of Ni and Si, Ni/Si, of 3.0 to 6.0, and having a content of S of less than 0.005 mass %, with the balance of being Cu and inevitable impurities, wherein the copper alloy material satisfies formulae (1) to (4): 130×C+300?TS?130×C+650??(1) 0.001?d?0.020??(2) W?150??(3) 10?L?800??(4) wherein TS represents a tensile strength (MPa) of the copper alloy material in a direction parallel to rolling; C represents the content (mass %) of Ni in the copper alloy material; d represents an average grain diameter (mm) of the copper alloy material; W represents a width (nm) of a precipitate free zone; and L represents a particle diameter (nm) of a compound on a grain boundary.

Abstract: A copper alloy material according to the present invention is characterized in that the same comprises: Ni between 2.8 mass % and 5.0 mass %; Si between 0.4 mass % and 1.7 mass %; S of which content is limited to less than 0.005 mass %; and the balance of the copper alloy material is composed of copper and unavoidable impurity, wherein a proof stress is stronger than or equal to 800 MPa, and the same is superior in bending workability and in stress relaxation resistance.

Abstract: A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 ?m and not larger than 20 ?m, and a standard deviation of the crystalline grain diameter is not larger than 10 ?m.

Abstract: A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.