Abstract: An imaging apparatus includes an AF evaluation value calculation unit for calculating an AF evaluation value by integrating a focus differential signal value. The AF evaluation value calculation unit includes a high luminance region determination unit for extracting a feature of each pixel value and determining whether or not the feature is a backlight scene in a dark place, and a band determination unit for determining a band of a contour component of a subject. A focus differential signal value on a low luminance region side in a contour component formed by a boundary between a high luminance region and a low luminance region due to backlighting is excluded from the integration, and the AF evaluation value is calculated using only a focus differential signal value on the high luminance region side in the contour component of the subject to be focused as an object for the integration.

Abstract: An imaging apparatus includes an AF evaluation value calculation unit for calculating an AF evaluation value by integrating a focus differential signal value. The AF evaluation value calculation unit includes a high luminance region determination unit for extracting a feature of each pixel value and determining whether or not the feature is a backlight scene in a dark place, and a band determination unit for determining a band of a contour component of a subject. A focus differential signal value on a low luminance region side in a contour component formed by a boundary between a high luminance region and a low luminance region due to backlighting is excluded from the integration, and the AF evaluation value is calculated using only a focus differential signal value on the high luminance region side in the contour component of the subject to be focused as an object for the integration.

Abstract: In a complementary-MOSFET driving circuit for driving the charge multiplication gate of an EM-CCD, a ferrite bead is connected to a conduction-termination direction diode in parallel thereto, the conduction-termination direction diode being inserted into the gate electrodes of complementary MOSFETs in series therewith, the impedance of the ferrite bead at a switching frequency being lower than one-half of the gate-electrode impedance of the MOSFETs, a time during which the MOSFETs are brought into simultaneous conduction being shorter than ¼th of the switching period, the impedance of the ferrite bead at a frequency equivalent to ¼th of the switching period being higher than 2 times the gate-electrode impedance of the MOSFETs, a ferrite bead being connected to the drain electrodes of the complementary MOSFETs in series therewith, the impedance of the ferrite bead at the switching frequency being lower than one-half of the impedance of a capacitive load at the switching frequency, and the impedance of the ferr

Abstract: In a complementary-MOSFET driving circuit for driving the charge multiplication gate of an EM-CCD, a ferrite bead is connected to a conduction-termination direction diode in parallel thereto, the conduction-termination direction diode being inserted into the gate electrodes of complementary MOSFETs in series therewith, the impedance of the ferrite bead at a switching frequency being lower than one-half of the gate-electrode impedance of the MOSFETs, a time during which the MOSFETs are brought into simultaneous conduction being shorter than ¼th of the switching period, the impedance of the ferrite bead at a frequency equivalent to ¼th of the switching period being higher than 2 times the gate-electrode impedance of the MOSFETs, a ferrite bead being connected to the drain electrodes of the complementary MOSFETs in series therewith, the impedance of the ferrite bead at the switching frequency being lower than one-half of the impedance of a capacitive load at the switching frequency, and the impedance of the ferr