Abstract: A semiconductor device includes a semiconductor substrate having a drain region, a source region and an impurity diffusion region; an oxide film formed on the impurity diffusion region; a first protective film including a SiN film as a principal component and being formed on the oxide film; and a second protective film containing carbon and being formed on the first protective film. A method of manufacturing the semiconductor device, includes doping an impurity into a semiconductor substrate, thereby forming a drain region, a source region and an impurity diffusion region; forming an oxide film on the impurity diffusion region; forming a first protective film including a SiN film as a principal component on the oxide film; and forming a second protective film containing carbon on the first protective film.

Abstract: A semiconductor device includes a semiconductor substrate having a drain region, a source region and an impurity diffusion region; an oxide film formed on the impurity diffusion region; a first protective film including a SiN film as a principle component and being formed on the oxide film; and a second protective film containing carbon and being formed on the first protective film. A method of manufacturing the semiconductor device, includes doping an impurity into a semiconductor substrate, thereby forming a drain region, a source region and an impurity diffusion region; forming an oxide film on the impurity diffusion region; forming a first protective film including a SiN film as a principle component on the oxide film; and forming a second protective film containing carbon on the first protective film.

Abstract: A semiconductor wafer includes an insulation substrate with transparency; a silicon semiconductor layer formed on the insulation substrate; a chip forming area defined on the silicon semiconductor layer; a scribe line area defined on the silicon semiconductor layer for dividing the chip forming area; and an opaque pattern layer formed in the scribe line area. A plurality of opaque pattern portions is arranged apart from each other in the opaque pattern layer.

Abstract: A semiconductor wafer includes an insulation substrate with transparency; a silicon semiconductor layer formed on the insulation substrate; a chip forming area defined on the silicon semiconductor layer; a scribe line area defined on the silicon semiconductor layer for dividing the chip forming area; and an opaque pattern layer formed in the scribe line area. A plurality of opaque pattern portions is arranged apart from each other in the opaque pattern layer.