Abstract: The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

Abstract: The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

Abstract: The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

Abstract: A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials.

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

Abstract: The present invention relates to a chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, comprising: a chemical solution treatment unit which make the substrate come into contact with said chemical solution; a reservoir unit for storing the chemical solution which is used in said chemical solution treatment unit; and a chemical solution circulation system having said reservoir unit, a chemical solution supplying means for supplying the chemical solution inside said reservoir unit to said chemical solution treatment unit, and a chemical solution returning means for returning the chemical solution, which is used and recovered in said chemical solution treatment unit, to said reservoir unit, wherein: said chemical solution treatment unit comprises a chemical solution supplying nozzle for supplying the chemical solution to the substrate, and a recovering mechanism for recovering the used chemical solution; said reservoir unit has a

Abstract: A solution for forming a ferroelectric film characterized in that it contains at least one member selected from the group consisting of modified silicone oil and fluorinated surfactants, and a method for forming a ferroelectric film wherein said solution is used. A uniform film free from uneven coating (striation) is formed.

Abstract: The object of the present invention is to provide a solution and a method for forming a ferroelectric film capable of forming a uniform film free from uneven coating (striation).

Abstract: Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.

Abstract: A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

Abstract: The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

Abstract: This invention provides a remover comprising (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.

Abstract: A photoresist stripping liquid composition effective for removing resist residues after dry etching and resist ashing in the manufacturing processes of semiconductor devices, which does not corrode the different metallic materials, and wherein are comprised, as active component, one or more polycarboxylic acids and/or their salts selected from the group consisting of aliphatic polycarboxylic acids and their salts as well as aminopolycarboxylic acids and their salts.

Abstract: Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.

Abstract: The present invention relates to a cleaning solution for cleaning substrates, to which a metallic wiring has been applied, being capable of easily removing the metallic impurities of the substrate surface without corroding the metal, not putting a strain on the environment, and not causing a shelf life problem.The cleaning solution comprising at least one member selected from a group consisting of oxalic acid, ammonium oxalate and polyaminocarboxylic acids, but contains no hydrogen fluoride.

Abstract: After the resist is removed with an alkaline solution, a noncorrosive rinse solution is applied to the substrate which is composed of (a) a water-soluble monovalent lower alcohol and an organic or inorganic acid, or (b) a water-soluble monovalent lower alcohol, an organic or inorganic acid and water or (c) an organic or inorganic acid. This rinse solution prevents corrosion completely when a resist is removed from Al-Si-Cu wiring :material, which is widely used as the wiring material for high-density integrated circuits.

Abstract: Sulfuric acid or sulfuric acid/hydrogen peroxide cleaning solutions used in semiconductor manufacturing processes are improved in wettability and cleaning effect by lowering their surface tension through the addition of surface-active agents Of the general formula R.sup.1 SO.sub.2 NR.sup.2 C.sub.2 H.sub.4 OA(I) wherein R.sup.1 stands for a fluoroalkyl group, R.sup.2 for H or a lower alkyl group and A for H or SO.sub.3 H.

Abstract: The present invention relates to a process for recovering and reusing a resist composition which comprises the steps of (a) collecting resin composition scattered from a spinner during application of the resist composition onto silicon wafers and otherwise no longer used and to be disposed of as waste liquid; (b) introducing the resist composition into a recovery tank; (c) introducing, while measuring the viscosity of the resist composition in the recovery tank, a solvent into the recovery tank in accordance with the measured viscosity until the resist composition shows a predetermined viscosity; (d) discontinuing the solvent supply when the viscosity of the resist composition has reached a predetermined value; (e) transferring the resist composition with the predetermined viscosity to a storage tank; and (f) taking out, whenever necessary, the resist composition from the storage tank for reuse.