Abstract: A semiconductor device with a monitor pattern and a method for monitoring device parameters. The monitor pattern comprises a semiconductor layer, a first region, a second region and a third region. The first region is formed in the semiconductor layer. The second region is formed within the first region so that the surface of the first region is divided into two portions. The third region is formed in the semiconductor layer and electrically connected to the substrate. One of the two portions of the first region is electrically connected to the third region.As the second region becomes deeper, the connection (lying beneath the second region) which connects the two portions of the first region becomes thinner. As this connection becomes thinner, its resistance is increased. Thus, monitoring of resistance between the two portions of the first region provides an index of the depth of the second region, and thereby of doping profile change during manufacture.