Abstract: Method for fabricating a nonvolatile ferroelectric memory, is disclosed, which can prolong a life time of the memory, including the steps of forming an insulating film on a semiconductor substrate, forming a bottom electrode on the insulating film, forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can not be induced to a ferroelectric phase by an electric field, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, and forming a top electrode on the ferroelectric film.

Abstract: An apparatus for forming a ultra-thin film of a semiconductor device includes: a reactive chamber consisting of an upper container and a lower container junctioned by an O-ring; a suscepter installed inside the reactive chamber for supporting a target substrate on which a ultra-thin film is to be formed; at least two gas supply pipes for respectively supplying at least two material gases into the reactive chamber to form a ultra-thin film on the substrate; gas supply controllers respectively installed at the gas supply pipes to repeatedly supply the material gases into the chamber; a gas outlet for discharging the gas from the chamber; remote plasma generators installed outside the reactive chamber and connected to the gas supply pipes for activating the material gases supplied through the gas supply pipes; and a temperature controller for controlling the temperature inside the chamber in a heat exchange method, the temperature controller being installed to surround the chamber.