Abstract: A method for manufacturing a semiconductor device includes forming a first stacked body having a plurality of first material films and a plurality of second material films that are alternately stacked, in a divided region of a semiconductor wafer including a chip region in which a semiconductor element is provided and the divided region between the adjacent chip regions, a plurality of times in a normal line direction of a substrate surface of the semiconductor wafer. The semiconductor wafer is fragmented by a blade having a width wider than the width of the first stacked body.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes forming a slit in a first wafer in which a first semiconductor layer is formed on a first substrate, sticking together the first wafer in which the slit is formed and a second wafer in which a second semiconductor layer is formed on a second substrate, the sticking being performed between a side of the first semiconductor layer and a side of the second semiconductor layer, thinning the first substrate or the second substrate of a member obtained by the sticking, forming an interconnection on a face of the substrate that is thinned, and dicing a member on which the interconnection is formed in accordance with a position of the slit.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes forming a slit in a first wafer in which a first semiconductor layer is formed on a first substrate, sticking together the first wafer in which the slit is formed and a second wafer in which a second semiconductor layer is formed on a second substrate, the sticking being performed between a side of the first semiconductor layer and a side of the second semiconductor layer, thinning the first substrate or the second substrate of a member obtained by the sticking, forming an interconnection on a face of the substrate that is thinned, and dicing a member on which the interconnection is formed in accordance with a position of the slit.

Abstract: A method of evaluating the flame retardancy of a sealing resin comprises a step of fusion cutting a heating element by causing the heating element to generate heat by the passage of electric current to a test sample of a molded body of the sealing resin including the heating element therein; a step of igniting the sealing resin by continuing the passage of electric current even after the heating element is fusion-cut; and a step of measuring voltage and/or current applied in a period from when the heating element is fusion-cut to the ignition of the sealing resin. The test sample is used in the method of evaluating the flame retardancy and provided with a heating wire; conducting terminals made of metal having an electric resistance lower than the heating wire and connected to both ends of the heating wire; and a sealing resin layer covering the outer periphery of the heating wire.