Abstract: The present invention relates to a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of protruding base structures (104) arranged on a surface of a first substrate (102), providing a seed layer mixture, comprising a solvent/dispersant and a seed material, in contact with the protruding base structures, providing a second substrate arranged in parallel with the first substrate adjacent to the protruding base structures, thereby enclosing a majority of the seed layer mixture between the first and second substrates, evaporating the solvent, thereby forming a seed layer (110) comprising the seed material on the protruding base structures, removing the second substrate, providing a growth mixture, comprising a growth agent, in contact with the seed layer, and controlling the temperature of the growth mixture so that nanostructures (114) are formed on the seed layer via chemical reaction in presence of the growth agent.

Abstract: The present invention relates to a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of protruding base structures (104) arranged on a surface of a first substrate (102), providing a seed layer mixture, comprising a solvent/dispersant and a seed material, in contact with the protruding base structures, providing a second substrate arranged in parallel with the first substrate adjacent to the protruding base structures, thereby enclosing a majority of the seed layer mixture between the first and second substrates, evaporating the solvent, thereby forming a seed layer (110) comprising the seed material on the protruding base structures, removing the second substrate, providing a growth mixture, comprising a growth agent, in contact with the seed layer, and controlling the temperature of the growth mixture so that nanostructures (114) are formed on the seed layer via chemical reaction in presence of the growth agent.

Abstract: The present invention relates to an integrated circuit for high-frequency applications, comprising a substrate (31) of high resistivity, active components (37, 41) and an inductor (45) above said substrate, whereby the active components and the inductor are arranged laterally mainly separated. According to the invention a layer (33) of low resistivity is comprised below the active components and laterally separated from the inductor. The invention also relates to a method for manufacturing said semiconductor device, which particularly comprises adding two new process steps, a masking step and a doping step, respectively, to a known process.

Abstract: A detector circuit, for example for optical radiation, has a detector diode (20) and an amplifier circuit (30) integrated with the diode in the same silicon wafer for amplification of the diode signal. The diode is designed as a lateral diode. The diode and the amplifier circuit are both produced in a homogeneously weakly doped silicon wafer (1).

Abstract: Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.